1/f Conductance noise in stabilized amorphous selenium

Majid, Shaikh Hasibul; Johanson, Robert E.

doi:10.1016/j.jnoncrysol.2005.11.146

Cited by 3 publications

(3 citation statements)

References 7 publications

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“…In our previous publications [4,9] we mentioned that electrode type, alloy type and the thickness of the a-Se layer affects the 1/f noise and in this work it is quite evident that surface condition, alloy of the bulk material and the substrate temperature affect the 1/f noise quite significantly. Some samples produced Random Telegraphic type of noise (RTN) at a large electric field.…”

Section: Resultsmentioning

confidence: 50%

“…The physical origin for most of materials is unknown. We reported some of the first measurements of 1/f noise in stabilized amorphous selenium (a-Se) alloys [4] that is Se with 0.3%-0.5% As (to retard crystallization) and tens of ppm Cl (to passivate defects). Stabilized a-Se is used in direct-conversion, X-ray digital radiography as the photoconductive layer.…”

Section: Introductionmentioning

confidence: 99%

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Studies on excess noise in stabilized amorphous selenium used in X-ray photodetectors

Majid

Johanson

2008

Journal of Non-Crystalline Solids

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Section: Resultsmentioning

confidence: 50%

Section: Introductionmentioning

confidence: 99%

Studies on excess noise in stabilized amorphous selenium used in X-ray photodetectors

Majid

Johanson

2008

Journal of Non-Crystalline Solids

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“…We have previously published measurements of the excess conductance noise in homogeneous layers of selenium alloys [5][6][7]. The noise was found to be sensitive to the metal used for the electrodes and to the surface conditions, and we concluded that the noise was generated at the metal-semiconductor interface rather than in the selenium.…”

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confidence: 91%

Excess noise in amorphous selenium p‐i‐n devices

Majid

Johanson

2010

Phys. Status Solidi (c)

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We report on 1/f noise measurements in amorphous selenium p‐i‐n devices, where the p‐ and n‐layers are trapping layers for electrons and holes respectively. Under forward bias, the normalized 1/f noise power is 5 × 104 times less than that of a single i‐layer device. At frequencies above 100 Hz, a region of white noise is observed that we attribute to partial shot noise.We propose that the reduction in 1/f noise and the region of shot noise are a result of the trapping layers acting as reservoirs of charge carriers. The traps randomize the charge carriers producing the observed white noise and act as the source of the device current. Sourcing the current in this way suppresses the very noisy charge injection from the metal electrodes which controls the current in single i‐layer devices (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Low-frequency noise in a-Se based x-ray photoconductors

Meyer

Johanson

Belev

et al. 2011

2011 21st International Conference on Noise and Fluctuations

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We report on the excess, low-frequency noise in pin-like amorphous selenium alloy structures that are used in direct-conversion x-ray imaging detectors. These are the first measurements of the noise power density spectrum in these structures under reverse bias. Of the two samples measured, one has a noise spectrum that fits well to a 1/f α power law with α near one. The 1/f noise is not atypical except for a nonlinear dependence on d.c. current at fields above 5 Vµm. The variance in correlated double sampling measurements of the noise signal is calculated and related to the 1/f noise spectrum. The other sample has a white noise spectrum down to 10 −2 Hz. The white noise of the second sample is larger than the 1/f noise and is likely masking the 1/f noise over the measured frequency range. The origin of the white noise is not known.

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1/f Conductance noise in stabilized amorphous selenium

Cited by 3 publications

References 7 publications

Studies on excess noise in stabilized amorphous selenium used in X-ray photodetectors

Studies on excess noise in stabilized amorphous selenium used in X-ray photodetectors

Excess noise in amorphous selenium p‐i‐n devices

Low-frequency noise in a-Se based x-ray photoconductors

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