1/f noise analysis of 980  nm InGaAs/GaAs laser diodes below the lasing threshold

Abstract

We present a 1 / f noise model of 980 nm InGaAs/GaAs laser diodes (LDs) operated below the lasing threshold to study the correlation between 1 / f noise and fluctuation of surface nonradiative recombination current I n r . In InGaAs/GaAs LDs, nonradiative recombination current components have been identified as being primarily related to surface recombination, which depends on surface oxide traps and lattice dislocation. An analysis of the experimental comparison of I n r and 1 / f noise spectral density with constant current and temperature aging tests further shows the correlation and verifies the 1 / f noise model, which can be interpreted as a change in carriers and trap density of a certain surface. This model permits facet stability to be investigated.