1/f noise in metal insulator semiconductor transistors with different conductivity types and different topological dimensions of the channel

Zhigal'skii, G. P.; Gvas’kov, A. A.; Sitkin, P. O.

doi:10.1134/s1064226907060150

Cited by 2 publications

(5 citation statements)

References 4 publications

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“…The predominant sources of noise in graphene devices are a combination of local fluctuations in the charge carrier density [37], local fluctuations in the carrier mobility [38] and contact resistance [39]. In dark, we observe at each bias a 1/f trend of S I , which corresponds to Flicker noise, and it is the typical type of noise observed in graphene-based devices [40], as well as in other 3-D material systems [41,42] such as metal-insulatorsemiconductor transistors [43] and photodetectors [44]. Specifically, Ref.37 attributed the origin of Flicker noise in graphene to the random trapping/de-trapping of charge carriers at the interface with the oxide supporting the graphene layer, which ultimately affects transport across the material.…”

Section: Resultsmentioning

confidence: 73%

“…Specifically, Ref.37 attributed the origin of Flicker noise in graphene to the random trapping/de-trapping of charge carriers at the interface with the oxide supporting the graphene layer, which ultimately affects transport across the material. In 3-D metal-insulatorsemiconductor structures, noise is also originated from the charge trapping in the insulating layer, influencing electronic transport [43,44]. These mechanisms explain the overall 1/f trend observed in Fig.…”

Section: Resultsmentioning

confidence: 87%

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Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

De Fazio,

Uzlu,

Torre

et al. 2020

Preprint

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Graphene-based photodetectors have shown responsivities up to 10 8 A/W and photoconductive gains up to 10 8 electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout requires dark currents of hundreds of µA up to mA, leading to high power consumption needed for the device operation. Here we propose a novel approach for highly responsive graphenebased photodetectors with orders of magnitude lower dark current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots, induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier, and giving rise to a novel type of gain mechanism. This readout requires dark currents of hundreds of nA up to few µA, orders of magnitude lower than other graphene-based photodetectors, while keeping responsivities of ∼70 A/W in the infrared, almost two orders of magnitude higher compared to established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required.

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Section: Resultsmentioning

confidence: 73%

Section: Resultsmentioning

confidence: 87%

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

De Fazio,

Uzlu,

Torre

et al. 2020

Preprint

View full text Add to dashboard Cite

show abstract

“…In 3-D metal−insulator−semiconductor structures, noise also originates from the charge trapping in the insulating layer, influencing electronic transport. 52,53 These mechanisms explain the overall 1/f trend observed in Figure 5a. At frequencies >40 Hz, we start detecting the 50 Hz main hum and its harmonics, which explains the peaks in the figure . A larger bias causes S I to rise accordingly, which is typical of flicker noise in electronic devices where S I is proportional to the average squared direct current I 2 measured at the respective bias.…”

Section: Resultsmentioning

confidence: 77%

“…14 The predominant sources of noise in graphene devices are a combination of local fluctuations in the charge carrier density, 46 local fluctuations in the carrier mobility, 47 and contact resistance. 48 In the dark, we observe at each bias a 1/f trend of S I , which corresponds to flicker noise, and it is the typical type of noise observed in graphene-based devices 49 as well as in other 3-D material systems 50,51 such as metal− insulator−semiconductor transistors 52 and photodetectors. 53 Specifically, ref 46 attributed the origin of flicker noise in graphene to the random trapping/detrapping of charge carriers at the interface, with the oxide supporting the graphene layer, which ultimately affects transport across the material.…”

Section: Resultsmentioning

confidence: 87%

“…Specifically, ref attributed the origin of flicker noise in graphene to the random trapping/detrapping of charge carriers at the interface, with the oxide supporting the graphene layer, which ultimately affects transport across the material. In 3-D metal–insulator–semiconductor structures, noise also originates from the charge trapping in the insulating layer, influencing electronic transport. , These mechanisms explain the overall 1/ f trend observed in Figure a. At frequencies >40 Hz, we start detecting the 50 Hz main hum and its harmonics, which explains the peaks in the figure.…”

Section: Resultsmentioning

confidence: 96%

See 1 more Smart Citation

Graphene–Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout

et al. 2020

View full text Add to dashboard Cite

Graphene-based photodetectors have shown responsivities up to 108 A/W and photoconductive gains up to 108 electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity to graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semimetallic nature of graphene, the readout requires dark currents of hundreds of microamperes up to milliamperes, leading to high power consumption needed for the device operation. Here, we propose a different approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark-current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots induces a variation of the current flowing across a metal–insulator–graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier and giving rise to an alternative gain mechanism. This readout requires dark currents of hundreds of nanoamperes up to a few microamperes, orders of magnitude lower than that of other graphene-based photodetectors, while keeping responsivities of ∼70 A/W in the infrared, almost 2 orders of magnitude higher than that of established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required.

show abstract

1/f noise in metal insulator semiconductor transistors with different conductivity types and different topological dimensions of the channel

Cited by 2 publications

References 4 publications

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout

Graphene–Quantum Dot Hybrid Photodetectors with Low Dark-Current Readout

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