1/f noise in MODFETs at low drain bias

Peransin, J.M.; Vignaud, Patrick; Rigaud, D.; Vandamme, L.K.J.

doi:10.1109/16.59916

Cited by 157 publications

(87 citation statements)

References 9 publications

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“…The best candidate to account for the anomalous noise seems to be ͑ii͒ when we assume a noisy series resistance in the channel dominating the noise of the channel but not its resistance. This has often been observed in submicron metalsemiconductor transistors, high electron mobility transistors 17 and metal-oxide-semiconductor ͑MOS͒ transistors. 18,21,22 …”

Section: On 1õf Noise As a Diagnostic Toolmentioning

confidence: 99%

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Vandamme

Feyaerts

Trefán

et al. 2002

Journal of Applied Physics

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We investigate low frequency conductivity noise in the drain-source channel of organic material field-effect transistors by measuring the spectra of current fluctuations for several values of the gate voltage V gs and drain voltage V ds and find that it is 1/f . The samples are biased in the ohmic range of the applied V ds . The relative current 1/f noise is inversely proportional to the charge carrier numbers N generated by illumination or by varying the gate-source voltage. Hooge's empirical relation for the 1/f noise is validated for these organic semiconductors with an ␣Х0.01 for poly-thienylene vinylene and about 100 for pentacene thin film transistors. From geometry dependence of the noise we conclude that series resistance can be ignored for poly-thienylene vinylene field-effect transistors. However, some pentacene samples suffer from a noisy series resistance to the channel resistance. From the 1/f noise dependence on geometry and gate voltage bias we conclude that it can be used as a diagnostic tool for device quality assessment.

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Section: On 1õf Noise As a Diagnostic Toolmentioning

confidence: 99%

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Vandamme

Feyaerts

Trefán

et al. 2002

Journal of Applied Physics

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“…If the samples kave only one pair of contacts, as in FETs or MOSFETs, there is only one way to distinguish between contact noise and bulk noise: by applying an L-array [23,24]. An L-array is a set of samples submitted to homogeneous fields all having the same width but different lengths L between contacts.…”

Section: Four-point Measurements How To Suppress Contact Noisementioning

confidence: 99%

1/f noise in homogeneous and inhomogeneous media

Vandamme

Trefán

2002

IEE Proceedings - Circuits, Devices and Systems

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Some experimental techniques for low-frequency resistance noise measurements are discussed. The criterion for using a low-noise current amplifier instead of voltage amplifier is given. A distinction is made between contact and bulk resistance contributions to the observed llfnoise. The merits and difficulties of the application of the empirical relation for the lif noise in homogeneous and inhomogeneous media are addressed. The criterion that lif noise in homogeneous samples can only be detected for a number of free carriers N < lOI4 is calculated.The authors explain why the enhanced Ilf noise, due to poor crystal quality, current crowding at contacts or at grain boundaries, and at inhomogeneous internal interfaces can be used as a diagnostic tool for quality and reliability assessment of electronic devices. List of symbols

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“…When noise is independent of V G , only the ungated device channel noise (S I,U ) contributes and R G « R U . 15,16 This illustrates the potential of this method for distinguishing the evolution of the damage and to monitor the creation of the defects in the device channel during stress.5 Figure 3 depicts the change of the normalized current spectral density noise S I /I 2 versus the effective gate voltage V G before and during OFF-state stress. Immediately after the onset of the SBD, no increase in channel noise, neither in the gated nor ungated part, was apparent, even after several EL spots emerged, as demonstrated in figure 3(a) and its inset, respectively.…”

mentioning

confidence: 99%

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

Silvestri

Uren

Killat

et al. 2013

Applied Physics Letters

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The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis. The gate bias dependence of the 1/f noise is shown to be a powerful tool to illustrate that in addition to the gate edge breakdown, progressive time-dependent trap generation occurs underneath the gate area, possibly extending in the gate-drain access region due to the electric field peak associated with the gate field plate.Keywords: AlGaN/GaN HEMT, 1/f noise, reliability, OFF-state stress, Electroluminescence. a) Electronic mail: Marco.Silvestri@bristol.ac.uk 2 AlGaN/GaN high electron mobility transistors (HEMTs) are considered to be of high potential for high power, high voltage applications. The ever-increasing power demand in radio frequency, industrial, and automotive fields is key for these devices that exhibit both high mobility and breakdown voltage. 1 Charge trapping, material defects, current collapse, and gate degradation are among the main challenges and sources of failure in GaN-based HEMTs. 3 Above all, the gate breakdown is still a limiting factor for achieving long-term reliability at high operative voltages. In this framework, the introduction of field plates and engineered gate shapes significantly mitigated current collapse and reduced gate breakdown occurence. 4 However, electroluminescence (EL) studies still show the appearance of degradation-related hot spots, under harsher stress conditions, at the drain side of the gate edge following OFF-state stress-tests. [5][6][7] Low frequency 1/f noise was proven to be a useful tool for reliability studies of AlGaN/GaN HEMTs. 8 Early work revealed higher noise in GaN HEMTs than AlGaAs/GaAs devices due to the larger density of native defects. 9 The relatively high gate leakage current exhibited by Schottky-gate GaN HEMTs is also one of the main limiting factor which can contribute to the channel noise. 10 However, recent material advances and the reduction of surface and barrier defects have improved the noise performance of AlGaN/GaN HEMTs. 11Electronic generation-recombination trap states close to the Fermi level can be effectively measured based on low frequency noise and used to extract trap characteristics, such as activation energy, capture cross section, and trap density, as well as monitor device degradation during reliability tests. 12,13 The gate voltage dependence of the normalized noise spectral density was reported by other authors to be applicable to GaAs and GaN devices, demonstrating the ability to isolate the effect of noise in different areas of the device channel.To date, this approach has not been used to benefit the understanding of device damage during reliability tests. 3In this letter, the gate voltage and drain current dependences of the 1/f low frequency noise and EL signal are shown to be of great benefit to monitor and localize the damage in different parts of the GaN HEMT channel during OFF-state stress te...

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1/f noise in MODFETs at low drain bias

Cited by 157 publications

References 9 publications

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

1/f noise in pentacene and poly-thienylene vinylene thin film transistors

1/f noise in homogeneous and inhomogeneous media

Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements

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