1∕f noise of SnO2 nanowire transistors

Transparent Metal Oxide Nanowire Electronics

“…These results indicate that SAND nanodielectric and various SnO 2 nanowire surface treatments and annealing steps can be used successfully to enhance the quality of the interfaces, thus reducing dielectric/semiconductor interface state densities and improving the 1/f noise with respect to untreated devices [28]. Furthermore, the interface density was found much lower for SAND (a H = 3.3-5.1 Â 10 À2 ) than in SiO 2 -based SnO 2 TFTs (a H = 3.5 Â 10 À1 ) [87].…”

“…We exploited the combination of undoped SnO 2 nanowires with SAND dielectrics and demonstrated TFTs with a field effect mobility of $172 cm 2 V À1 s À1 (for a single wire transistor), subthreshold slope of $0.3 V decade À1 , I on /I off of 10 6 , and threshold voltage of À1.9 V [28]. For these NWTs, low frequency noise measurements were carried out to analyze current fluctuation and understand the origin of the enhanced TFT performance with SAND vs. SiO 2 as gate dielectric.…”

Temperature dependence of the low frequency noise in indium arsenide nanowire transistors

“…Mostly, the excess noise had 1 / f dependence except at low temperatures and gate voltages close to the threshold value where the noise changed gradually to Lorentzian. [5][6][7] The 1 / f noise is now being routinely used as a tool to evaluate the noise performance of NW and nanotube field effect transistors ͑FETs͒. The distribution of activation energies of the fluctuators responsible for the noise was found to have broad minima associated with the characteristic temperature of the thermally activated Hooge's parameter.…”

Low-frequency noise characterization of single CuO nanowire gas sensor devices

“…11,12 Moreover, this characterization technique is a promising candidate for selective gas sensing because of specific noise spectrum characteristics in the presence of different gas molecules. [13][14][15] Low-frequency conductance fluctuations of metal oxide nanowire transistors have been studied for the case of SnO 2 nanowires 16 and ZnO nanowires. 17,18 However, metal oxide nanowire devices under gas sensor operation conditions have received little attention so far.…”