1/f Temperature Fluctuation Mechanism and Some Applications to Electronic Devices

Abstract

A 1/f fluctuation mechanism based on a theorem that the mean square fractional fluctuation ΔN 2/N 2 in a population N of an ideal gas in diffusion that comes in contact with a heat reservoir equals 1/N was proposed and simulated on a computer. We observed the 1/f power spectra in fluctuation waveforms. To confirm the simulated results, the origin of 1/f fluctuations was proven analytically and also the 1/f fluctuation spectrum of particles in the Brownian motion was verified experimentally. On the basis of the results, the 1/f fluctuations of temperature, resistance, and carrier recombination were formulated and compared with those of the experimental data. It was confirmed that the 1/f fluctuation mechanism could explain the experimental data quite well. The results also verified that the fluctuation due to the mobility fluctuation and the fluctuation due to the carrier density fluctuation were both explained well by the proposed fluctuation mechanism.