1/f - type Noise in View of Phonons Interface Percolation Dynamics

Abstract

The influence of long-wave acoustic longitudinal-phonon percolation dynamics on 1/f -type noise level is modeled for homogeneous, non-degenerated and bounded semiconductors. Phonons percolation from semiconductor media to environment regions via socalled «refraction points» of phonons' wave vector phase space is modeled within framework of the bulk mechanism of electron lattice mobility fluctuation. On the base of this mechanism it is shown, that semiconductor surface is the source of suppression of 1/f-noise. It is indicated that in some certain applications of the Fluctuation Theory it is physically correct to use Schönfeld model to consider 1/f noises in semiconductors.

Low-Frequency Noise Spectroscopy at Nanoscale: Carbon Nanotube Materials and Devices

“…Although it has been suggested that the 1/f -noise in bulk materials is induced by scattering with surface or/and bulk phonons (Mihaila, 2004;Gasparyan et al, 2010;Melkonyan et al, 2003Melkonyan et al, , 2005aMelkonyan et al, , 2005bMelkonyan et al, , 2006Melkonyan et al, , 2007 and the same may be true for CNTs (Gasparyan et al, 2009(Gasparyan et al, , 2011Mihaila, 2002) the agreement between SL A A and SL LL is striking and suggests that H  in CNFETs is not substantially influenced by the presence of acoustic phonon scattering in the long channel device. The noise amplitude of the CNT devices is related to the resistance of the device.…”

Noises and Signal-to-Noise Ratio of Nanosize EIS and ISFET Biosensors

“…To explain the nature and behavior of 1 f -noise in devices based on FET, the following basic theories and models are proposed: the carrier density or number fluctuation model introduced by McWhorter [16], the carriers mobil-ity fluctuation model proposed by Hooge empirical relation [17], the electron-phonon interaction model [18] [19] [20] [21] and the charge fluctuation model [22] [23] proposed by us.…”