1<i>/f</i>  Noise and Dark Current Correlation in Midwave InAs/GaSb Type‐II Superlattice IR Detectors

Ramos, David; Delmas, M.; Ivanov, Ruslan; Höglund, Linda; Costard, E.; Hellström, Per‐Erik; Malm, Gunnar

doi:10.1002/pssa.202000557

Cited by 5 publications

(4 citation statements)

References 18 publications

(23 reference statements)

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“…In this paper, all noise characteristics are shown in the HOT temperature range in addition to the low-temperature characterization. Furthermore, to the best of our knowledge, there are no low-frequency noise measurements reported for bariodes on GaAs substrate, in contrast to recently reported results for various detectors on GaSb substrate [19,21,22].…”

Section: Introductioncontrasting

confidence: 80%

“…In the high-temperature region, the noise coefficient decreases slightly for p-i-n, p-B p_SL -i-n because the shunt current is still significant for these structures as compared to the diffusion current. For p-B p_bulk -i-n, with low shunt current, the noise coefficient drops suggestively reaching a value of 1 × 10 −11 Hz −1 , which is much lower than the best (lowest) results found by us in the literature [19]. This translates into good noise performance of the p-B p_bulk -i-n detector at temperatures, where current is limited by its diffusion component.…”

Section: Noise Characteristicsmentioning

confidence: 60%

“…It was shown that such current, especially the diffusion component, has a much lower noise coefficient [18,21,[27][28][29]. For detectors with InAs/GaSb SL absorber, α g-r = 4.8 × 10 −9 Hz −1 and α diff = 1.9 × 10 −10 Hz −1 were found for generation-recombination and diffusion current, respectively [19]. In the high-temperature region, the noise coefficient decreases slightly for p-i-n, p-B p_SL -i-n because the shunt current is still significant for these structures as compared to the diffusion current.…”

Section: Noise Characteristicsmentioning

confidence: 99%

“…The issues arising from the omission of low-frequency noise during the calculation of specific detectivity and resulting errors are addressed. Usually, noise figures for InAs/GaSb-superlattice-based devices are given for low temperatures <150 K, which is understandable since cryogenically-cooled detectors are most commonly used [18][19][20]. In this paper, all noise characteristics are shown in the HOT temperature range in addition to the low-temperature characterization.…”

Section: Introductionmentioning

confidence: 97%

See 3 more Smart Citations

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

Czuba

Ciura

Sankowska

et al. 2021

Sensors

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In this paper, the results of the electrical, noise, and optical characterization of p-i-n and p-B-i-n diodes with AlSb and 4 ML AlSb/8 ML GaSb superlattice barriers in High-Operating Temperature conditions, are presented. Experimental and theoretical noise parameters were compared. Both dark current and noise analysis showed that the p-Bp_bulk-i-n bariode had the best performance. P-i-n photodiodes had the highest experimental value of specific detectivity (D*) of 6.16 × 109 Jones at 210 K and zero bias. At about −1 V reverse bias, the bariode with AlSb/GaSb electron barrier caught up to it and both devices achieved D* = (1–1.1) × 108 Jones. Further optimization of the superlattice-based electron barrier should result in the improvement of bariode performance at a smaller bias, at which better noise performance is more pronounced. It was shown that neglecting the low-frequency noise component can lead to a significant overestimation of detectivity. The simple method of incorporation of low-frequency noise contribution in the detectivity calculation, without time-consuming measurements, has been proposed.

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Section: Introductioncontrasting

confidence: 80%

Section: Noise Characteristicsmentioning

confidence: 60%

Section: Noise Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

Czuba

Ciura

Sankowska

et al. 2021

Sensors

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The Tobin Coefficient: A Relevant Photodetector Performance Metric for IR Imaging

Gravrand,

Kerlain,

Sam-Giao

et al. 2024

J. Electron. Mater.

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The well-known Rule07 is a simple thus efficient way to compare available technologies for IR imaging detectors in terms of dark current. The noise is then often estimated using a shot noise approximation on the dark current. Both II–VI and III–V communities use this rule of thumb as a reference for well-performing IR photodiodes. For HOT applications, a dark current close to this rule07 is considered a necessary condition but not a sufficient one to obtain a high-performance IR imager. Indeed, when limited by shot noise, rule07 describes well the noise behavior of the considered device. However, when considering low-frequency noise, it fails to describe the expected performances. In this paper, we focus on another figure-of-merit, dedicated to detector low-frequency noise rather than dark current. Systemic 1/f noise investigation in an IR detector was first reported by Tobin et al. in 1980. There is today a relative consensus on the fact that measured 1/f noise is proportional to the dark current. The ratio between the amplitude of the 1/f noise and the dark current of the same devices may therefore be used as a figure-of-merit for a given technology. This ratio (called the Tobin factor $${\alpha }_{\text{T}}$$ α T ) therefore appears adequate to compare different technologies as a figure-of-merit qualifying 1/f noise properties. This dimensionless ratio can also be very useful for optimizing a particular technology or process. However, in order to be relevant, this figure-of-merit must be estimated carefully as it appears, for instance, pixel pitch-dependent. Different examples of Tobin coefficient extraction are presented in this paper. We show that, depending on the technologies, the values of the Tobin coefficient can spread over several orders of magnitude. However, only low values result in high-quality IR imagers. Today, the best results we obtained show that $${\alpha }_{\text{T}}={10}^{-5}$$ α T = 10 - 5 is a state-of-art value to be compared with.

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Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors

Ciura

Jasik

Czuba

2021

Applied Physics Letters

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This Letter focuses on the 1/f noise properties of InAs/GaSb superlattice (SL), which is a promising material for infrared radiation detection and represents one of the alternatives to well-established bulk HgCdTe material. The InAs/GaSb SL material changes the conductivity type at temperature T ≈ 190 K, which has been correlated with measured 1/f noise. It was shown that 1/f noise comes from resistance fluctuations of linear noise sources. According to the electronic transport and 1/f noise models, the observed 1/f noise is connected with the hole conductivity component rather than the electron conductivity component, which is absent or at least immeasurable, even though electron conductivity governs the total conductivity of the InAs/GaSb SL. In the high-temperature region, the 1/f noise of InAs/GaSb SL is significantly smaller than that of InAs/InAsSb SL. The results favor InAs/GaSb SL material over InAs/InAsSb SL for photoconductive infrared detectors operating at room temperature.

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1/f Noise and Dark Current Correlation in Midwave InAs/GaSb Type‐II Superlattice IR Detectors

Cited by 5 publications

References 18 publications

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

The Role of Noise in Specific Detectivity of InAs/GaSb Superlattice MWIR Bariodes

The Tobin Coefficient: A Relevant Photodetector Performance Metric for IR Imaging

Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors

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