1/<i>f</i>noise and nonlinear effects in thin metal films

Zhigal'skii, G. P.

doi:10.1070/pu1997v040n06abeh000246

Cited by 32 publications

(4 citation statements)

References 105 publications

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“…One physical mechanism in particular, defect motion in metal films, has been linked to 1/f noise in resistance measurements which is well described by the TAF model. Metal film resistance noise is likely due to thermally activated defect migration around grain boundaries [28,29,35] and fluctuator energies in these systems peak in the 0.5 -1 eV range, depending on the micro-structure and the metal in question [28,36]. Defects in aluminum are typically lower in energy than defects in other common metals, such as gold or silver [37] and we find strong similarities between our results in Fig.…”

Section: Discussionsupporting

confidence: 79%

Electric-field noise from thermally activated fluctuators in a surface ion trap

et al. 2019

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We probe electric-field noise near the metal surface of an ion trap chip in a previously unexplored high-temperature regime. We observe a non-trivial temperature dependence with the noise amplitude at 1-MHz frequency saturating around 500 K. Measurements of the noise spectrum reveal a 1/f α≈1 -dependence and a small decrease in α between low and high temperatures. This behavior can be explained by considering noise from a distribution of thermally-activated two-level fluctuators with activation energies between 0.35 eV and 0.65 eV. Processes in this energy range may be relevant to understanding electric-field noise in ion traps; for example defect motion in the solid state and surface adsorbate binding energies. Studying these processes may aid in identifying the origin of excess electric-field noise in ion traps -a major source of ion motional decoherence limiting the performance of surface traps as quantum devices.

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Section: Discussionsupporting

confidence: 79%

Electric-field noise from thermally activated fluctuators in a surface ion trap

et al. 2019

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“…In our case, however, the line width of the interconnects is so small, %30 nm, that also the initiation of voids is likely to be visible in the 1/f noise measurements, but it is not a-priori known if that void will also propagate and eventually cause irreversible EM damage. To summarize, it is believed that the change in frequency exponent, observed in Figure 3(b), is related to the formation of voids, as also confirmed by the literature, 29,33 but its irreversible nature remains ambiguous. Nevertheless, together with the increasing magnitude of the noise PSD, frequency exponents larger than 2 do indicate that EM failure is imminent, as can be seen in Figure 3(b).…”

Section: A 1/f Noise Measurements As An Early Indicator For Em Damagesupporting

confidence: 62%

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

Beyne

Croes

Wolf

et al. 2016

Journal of Applied Physics

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The use of 1/f noise measurements is explored for the purpose of finding faster techniques for electromigration (EM) characterization in advanced microelectronic interconnects, which also enable a better understanding of its underlying physical mechanisms. Three different applications of 1/f noise for EM characterization are explored. First, whether 1/f noise measurements during EM stress can serve as an early indicator of EM damage. Second, whether the current dependence of the noise power spectral density (PSD) can be used for a qualitative comparison of the defect concentration of different interconnects and consequently also their EM lifetime t50. Third, whether the activation energies obtained from the temperature dependence of the 1/f noise PSD correspond to the activation energies found by means of classic EM tests. In this paper, the 1/f noise technique has been used to assess and compare the EM properties of various advanced integration schemes and different materials, as they are being explored by the industry to enable advanced interconnect scaling. More concrete, different types of copper interconnects and one type of tungsten interconnect are compared. The 1/f noise measurements confirm the excellent electromigration properties of tungsten and demonstrate a dependence of the EM failure mechanism on copper grain size and distribution, where grain boundary diffusion is found to be a dominant failure mechanism.

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“…To design molecular electronics circuits metal-molecule junctions have to be studied, since their electrical properties are extremely sensitive to external influences and binding geometry. The mechanisms of charge transport and low-frequency noise behavior in thin metal films and nanowires as well as in discontinuous metal films have been the objects of numerous investigations over the course of several decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. However, transport and noise measurements of molecular systems involving metal-molecule junctions are still challenging.…”

Section: Introductionmentioning

confidence: 99%

Noise spectroscopy of tunable nanoconstrictions: molecule-free and molecule-modified

Handziuk

Gasparyan

Vandamme³

et al. 2018

Nanotechnology

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Devices with metallic nanoconstrictions functionalized by organic molecules are promising candidates for the role of functional devices in molecular electronics. However, at the moment little is known about transport and noise properties of nanoconstriction devices of this kind. In this paper, transport properties of bare gold and molecule-containing tunable cross-section nanoconstrictions are studied using low-frequency noise spectroscopy. Normalized noise power spectral density (PSD) S /I dependencies are analyzed for a wide range of sample resistances R from 10 Ohm to 10 MOhm. The peculiarities and physical background of the flicker noise behavior in the low-bias regime are studied. It is shown that modification of the sample surface with benzene-1,4-dithiol molecules results in a decrease of the normalized flicker noise spectral density level in the ballistic regime of sample conductance. The characteristic power dependence of normalized noise PSD as a function of system resistance is revealed. Models describing noise behavior for bare gold and BDT modified samples are developed and compared with the experimental data for three transport regimes: diffusive, ballistic and tunneling. Parameters extracted from models by fitting are used for the characterization of nanoconstriction devices.

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1/fnoise and nonlinear effects in thin metal films

Cited by 32 publications

References 105 publications

Electric-field noise from thermally activated fluctuators in a surface ion trap

Electric-field noise from thermally activated fluctuators in a surface ion trap

1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

Noise spectroscopy of tunable nanoconstrictions: molecule-free and molecule-modified

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