1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

Nguyen, Ba Son; Lin, Jen Fin; Perng, Dung Ching

doi:10.1063/1.4866857

Cited by 67 publications

(58 citation statements)

References 45 publications

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“…Graphene has been demonstrated as an impermeable membrane for He 491 and both materials have been demonstrated as H 2 O/O 2 barriers for preventing oxidation of polymers and metals such as Cu and Ni. 492,493 Recently graphene (G) has also been demonstrated as a Cu diffusion barrier in Cu-G-Si structures annealed at temperatures up to 750…”

Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: 15mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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“…The highly impermeable graphene has been demonstrated for impeding the migration of liquid, gas and chemical/biological molecules [12][13][14][15][16][17] . Recently, researchers used graphene layer for preventing the reaction and inter-diffusion at the interfaces of Al/Si, Cu/Si and Au/Ni [18][19][20] . These results indicate the possibility of introducing a graphene barrier into solid-state electrolyte devices, e.g., the controllable mass transport in electrochemical metallization memory cells.…”

mentioning

confidence: 99%

Mass Transport Mechanism of Cu Species at the Metal/Dielectric Interfaces with a Graphene Barrier

et al. 2014

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The interface between the metal and dielectric is an indispensable part in various electronic devices. The migration of metallic species into the dielectric can adversely affect the reliability of the insulating dielectric and can also form a functional solid-state electrolyte device. In this work, we insert graphene between Cu and SiO2 as a barrier layer and investigate the mass transport mechanism of Cu species through the graphene barrier using density functional theory calculations, second-ion mass spectroscopy (SIMS), capacitance-voltage measurement, and cyclic voltammetry. Our theoretical calculations suggest that the major migration path for Cu species to penetrate through the multiple-layered graphene is the overlapped defects larger than 0.25 nm2. The depth-profile SIMS characterizations indicate that the "critical" thickness of the graphene barrier for completely blocking the Cu migration is 5 times smaller than that of the conventional TaN barrier. Capacitance-voltage and cyclic voltammetry measurement reveal that the electrochemical reactions at the Cu/SiO2 interface become a rate-limiting factor during the bias-temperature stressing process with the use of a graphene barrier. These studies provide a distinct roadmap for designing controllable mass transport in solid-state electrolyte devices with the use of a graphene barrier.

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“…Wen Pu et al coated stainless steel (SUS304) substrates with graphene and reported a fivefold improvement in corrosion resistance from polarization tests carried out in 3.5 wt% saline environment (Pu et al 2015). Protection from oxidation was also reported at ambient and elevated temperatures (Chen et al 2011;Prasai et al 2012;Kirkland et al 2012;Nguyen et al 2014). It has been observed that the stability of graphene layer against oxidation is dependent on its nanostructure.…”

Section: Resultsmentioning

confidence: 99%

A study on corrosion resistant graphene films on low alloy steel

Pavan

Ramanan

2016

Appl Nanosci

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Graphene nanosheets were produced after synthesizing graphene oxide via Hummer's method and a modified Hummer's method. The obtained graphene after reduction was dispersed in 1-propanol to get a coating solution. Mild steel coupons were coated with the graphene solution via dip coating method. Corrosion studies were carried out at different environments like water (pH 6.0), HCl (0.1 N), NaCl (3.5 wt%) and NaOH (1 M). Tafel analysis showed a reduction in the corrosion rate up to 99 % after three layer deposition with the graphene developed using the modified Hummer's method. X-ray diffraction and Raman Spectroscopy confirmed the presence of graphene.

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1-nm-thick graphene tri-layer as the ultimate copper diffusion barrier

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Cited by 67 publications

References 45 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Mass Transport Mechanism of Cu Species at the Metal/Dielectric Interfaces with a Graphene Barrier

A study on corrosion resistant graphene films on low alloy steel

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