10 and 7 μm Pitch Thermo-compression Solder Joint, Using A Novel Solder Pillar And Metal Spacer Process

Derakhshandeh, Jaber; Capuz, Giovanni; Cherman, Vladimir; Inoue, Fumihiro; Preter, Inge De; Hou, Lin; Bex, Pieter; Gerets, Carine; Duval, Fabrice; Webers, Tomas; Bertheau, J.; Huylenbroeck, Stefaan Van; Phommahaxay, Alain; Shafahian, Ehsan; Plas, G. Van der; Beyne, Eric; Miller, Andy; Beyer, Gerald

doi:10.1109/ectc32862.2020.00102

Cited by 18 publications

(1 citation statement)

References 7 publications

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“…Conventional solder-based micro-bump interconnects in combination with a TCB process can be scaled down further to around 20µm pitch with existing processes and technologies [1]. New solutions such as the embedded bump TCB, can allow a further scaling of the micro-bump pitch to 10 µm and below, while still using a TCB process [2]. However, when the interconnect pitch decreases to values below 10 µm, TCB becomes increasingly difficult.…”

Section: Introductionmentioning

confidence: 99%

Optimized Die Preparation and Handling for High Yield Hybrid Die to Wafer Bonding

Bex,

Phommahaxay,

Kennes

et al. 2024

IMAPSource Proceedings

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Hybrid Cu/dielectric bonding is a well-established technology for Wafer-To-Wafer (W2W) bonding, but it is challenging to apply this technology to Die-To-Wafer (D2W) bonding. Very small particles on the die or wafer can lead to voids/non-bonded regions. Processes to clean and activate wafers for hybrid W2W are quite mature, but it is very challenging to apply these to thinned and singulated dies for D2W bonding. To allow a (partial) re-use of the existing wafer level cleaning, metrology and activation processes and equipment, we propose a new concept where dies are being singulated, cleaned and activated on a glass carrier wafer. After the die preparation steps, the dies are directly picked from the carrier wafer. This approach does not involve additional pick & place steps and avoids the use of conventional dicing tapes. The first direct dielectric D2W bonding experiments using this new approach show a very promising bonding yield, with a high number of completely void-free bonded 50 μm thin dies. Additionally, by eliminating dicing tapes, thinned wafers and singulated dies are always supported by a rigid surface, enabling ultrathin die handling. In this study we also report the handling of dies down 10 μm thickness.

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Section: Introductionmentioning

confidence: 99%