10-Gb/s driver amplifier using a tapered gate line for improved input matching

Shohat, J.; Robertson, I.D.; Nightingale, S.J.

doi:10.1109/tmtt.2005.855119

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…Tapering the length of the gate line sections is another technique to improve input impedance matching of the DA [57]. It is shown by gradually decreasing the length of the gate line sections, input impedance matching is improved while ripple in the gain of the DA is reduced.…”

Section: E Nonuniform Dasmentioning

confidence: 99%

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

2018

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I. INTRODUCTION B ROADBAND amplification of signals is desirable in many applications such as high-speed data communications, high-resolution imaging systems, optoelectronics and instrumentation systems. Wide bandwidth is one of the prominent factors to be considered in designing such a system since it determines ability of the system for transferring highdata-rate information, transmitting/receiving short pulses, or processing wideband signals. Designing broadband amplifiers has always been challenging. The ever-increasing demand for higher data-rates and low energy consumption in next generation communication systems further complicates the design of broadband amplifiers. Distributed amplifiers (DA), also known as travelling-wave amplifiers (TWA), are one of the most popular broadband amplifier architectures. The DA architecture was originally patented by Percival in 1936 [1] and later elaborated by Ginzton in 1948 [2]. The early DAs were implemented using vacuum tube technology. One of the first vacuum tube DAs fabricated in 1950 is shown in Fig. 1. The amplifier included three type 807 tubes and 482-Ω plate and grid lines. The amplifier achieved a gain of 11 dB, bandwidth of 100 Hz to 300 MHz, and a typical output power of 15 W [3]. The first Monolithic Microwave Integrated Circuit (MMIC) DA was demonstrated by Ayasli in 1982 [4] using a Gallium Arsenide (GaAs) MESFET technology. The amplifier, shown in Fig. 2, included four transistors with 1-µm gate length and 50-Ω input and output lines. It achieved 9-dB gain and 1-13 GHz bandwidth. GaAs remained the main technology for design of DAs until the inception of the first Indium Phosphide (InP) DA in 1990 [5] with an impressive bandwidth of 5-100 GHz. GaAs and InP semiconductor technologies have been predominantly employed in implementation of DAs. These technologies provide superior performance resulting from their high electron mobility, high saturated electron velocity, high breakdown voltage, and high-resistivity substrate. The later contributes to availability of low-loss integrated passive elements. The market demands for low cost, small size, and low power consumption of electronic systems has motivated researchers to develop techniques to implement distributed amplifiers using mainstream CMOS technologies. The first integrated CMOS DA was presented by Kleveland in 1999 [6]. Recently,

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Section: E Nonuniform Dasmentioning

confidence: 99%

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

2018

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“…The demand for wideband applications in the crowded lower K and Ka bands has forced designers to choose the Q band for modern wideband designs. Distributed Amplifier (DA) design is the best choice for wide bandwidth applications like optical drivers [1]. DAs were designed at first with vacuum tube technology.…”

Section: Introductionmentioning

confidence: 99%

DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology

Lakshmi

Sharma

2023

Eng. Technol. Appl. Sci. Res.

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This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. This is the first NUDA of Darlington topology designed with the 0.1µm GaAs pHEMT process with a transition frequency fT of 130GHz. Gate microstrip line sections, drain microstrip line sections, and active device sizes were optimized to obtain high gain and large bandwidth from a Monolithic Microwave Integrated Circuit (MMIC) Distributed Amplifier (DA). This paper presents two NUDA designs with different topologies. The first was designed with a three-stage Common Source (CS) topology that enhanced the bandwidth up to 34GHz with a gain greater than 8dB, and the second was designed with two Darlington stages and one CS stage that enhanced the bandwidth up to 38GHz with a gain greater than 8dB. The bandwidth enhancement of NUDA with the Darlington topology was compared and verified with the NUDA of common source topologies.

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Investigation of drain-line loss and the S22 kink effect in capacitively coupled distributed amplifiers

Shohat

Robertson

Nightingale

2005

IEEE Trans. Microwave Theory Techn.

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10-Gb/s driver amplifier using a tapered gate line for improved input matching

Cited by 5 publications

References 14 publications

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

DC-38GHz Nonuniform Distributed Amplifier Design with Gate and Drain Line Optimization Using 0.1µm GaAs pHEMT Technology

Investigation of drain-line loss and the S22 kink effect in capacitively coupled distributed amplifiers

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