10 nm nominal channel length MoS&lt;inf&gt;2&lt;/inf&gt; FETs with EOT 2.5 nm and 0.52 mA/&amp;#x00B5;m drain current

Li, Yang; Lee, R.T.P.; Rao, Sunil S.; Tsai, W.; Ye, P. D.

doi:10.1109/drc.2015.7175655

Cited by 19 publications

(15 citation statements)

References 2 publications

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“…Benchmarking various 2D semiconductor FETs. (a) Maximum current density ( J on = I on / t ch ) vs I on / I off for our monolayer MoS 2 , for other high-current 2D semiconductor devices ,,,,,− of varying layer thickness (0.6 nm ≤ t ch ≤ 14 nm), and a Si nanowire device . (b) Maximum I on vs I on / I off of our AlO x -doped MoS 2 compared with other doped 2D-FETs. ,,,,− While some doping methods yield high I on , the I on / I off can be much lower due to charge trapping in the 2D material or its interface.…”

Section: Resultsmentioning

confidence: 95%

High Current Density in Monolayer MoS₂ Doped by AlO_x

et al. 2021

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Semiconductors require stable doping for applications in transistors, optoelectronics, and thermoelectrics. However, this has been challenging for two-dimensional (2D) materials, where existing approaches are either incompatible with conventional semiconductor processing or introduce time-dependent, hysteretic behavior. Here we show that low temperature (< 200°C) sub-stoichiometric AlO x provides a stable n-doping layer for monolayer MoS 2 , compatible with circuit integration. This approach achieves carrier densities >2×10 13 cm -2 , sheet resistance as low as ~7 kΩ/□, and good contact resistance ~480 Ω⋅μm in transistors from monolayer MoS 2 grown by chemical vapor deposition. We also reach record current density of nearly 700 μA/μm (>110 MA/cm 2 ) in this three-atom-thick semiconductor while preserving transistor on/off current ratio > 10 6 . The maximum current is ultimately limited by self-heating and could exceed 1 mA/μm with better device heat sinking. With their 0.1 nA/μm off-current, such doped MoS 2 devices approach several low-power transistor metrics required by the international technology roadmap.

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Section: Resultsmentioning

confidence: 95%

High Current Density in Monolayer MoS₂ Doped by AlO_x

et al. 2021

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“…Two-dimensional (2D) materials have shown great potential in the application of nanotransistors, especially for beyond 5 nm node technology. 1−5 Among thousands of 2D materials, black phosphorus (BP) has triggered intensive research interests owing to its unique material properties. 6−8 Depending on the number of layers, the band gap of BP varies from 0.35 to 2.0 eV.…”

Section: Introductionmentioning

confidence: 99%

“…Two-dimensional (2D) materials have shown great potential in the application of nanotransistors, especially for beyond 5 nm node technology. − Among thousands of 2D materials, black phosphorus (BP) has triggered intensive research interests owing to its unique material properties. − Depending on the number of layers, the band gap of BP varies from 0.35 to 2.0 eV. , The hole Hall mobility of BP is as high as 5200 cm 2 /V s at room temperature with hexagonal boron nitride (h-BN) passivation . BP has a puckered honeycomb atomic structure, which leads to its highly anisotropic transport characteristics. , The moderate direct band gap and high carrier mobility make BP a strong candidate for high-performance transistor applications. − …”

Section: Introductionmentioning

confidence: 99%

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

Charnas

Qiu

et al. 2017

ACS Omega

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Black phosphorus (BP) is a recently rediscovered layered two-dimensional (2D) semiconductor with a direct band gap (0.35–2 eV), high hole mobility (300–5000 cm 2 /Vs), and transport anisotropy. In this paper, we systematically investigated the effects of metal–semiconductor interface/contacts on the performance of BP Schottky barrier transistors. First, a “clean” metal–BP contact is formed with boron nitride (BN) passivation. It is found that the contact resistance of the clean metal–BP contact is seven times less than the previously reported values. As a result, high-performance top-gate BP transistors show a record high ON-state drain current ( I on ) of 940 μA/μm. Second, BN tunneling barriers are formed at the source/drain contacts to help understand the abnormally high OFF-state drain current ( I off ) in devices with clean metal–BP contacts. This high I off is attributed to the electron tunneling current from the drain to the channel. Finally, the I on / I off of BP field-effect transistors can be significantly improved by using an asymmetric contact structure. By inserting a thin BN tunneling barrier at the drain side, I off is reduced by a factor of ∼120 with a cost of 20% reduction in I on . This case study of contacts on BP reveals the importance of understanding the metal–semiconductor contacts for 2D Schottky barrier transistors in general.

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“…Transistors based on high mobility III–V materials, , nanowire field-effect transistors (FETs), , internal gain FETs , (such as negative capacitance devices), and tunnel FETs are among those that have been considered to date. More recently, layered 2D semiconducting crystals of transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ), have also been proposed to enable aggressive miniaturization of FETs. − In addition to the reduced direct source–drain tunneling current possible in these wide-bandgap materials, the atomically thin body of these novel semiconductor materials is expected to improve the transport properties in the channel thanks to the lack of dangling bonds. Some studies have reported, for example, that single-layer MoS 2 has a higher mobility than ultrathin body silicon at similar thicknesses.…”

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confidence: 99%

MoS₂ Field-Effect Transistor with Sub-10 nm Channel Length

Nourbakhsh¹,

Zubair²,

Sajjad³

et al. 2016

Nano Lett.

441

299

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Atomically thin molybdenum disulfide (MoS) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached the sub-10 nm scale due to the multiple challenges related to nanofabrication at this length scale and the high contact resistance traditionally observed in MoS transistors. Here, using the semiconducting-to-metallic phase transition of MoS, we demonstrate sub-10 nm channel-length transistor fabrication by directed self-assembly patterning of mono- and trilayer MoS. This is done in a 7.5 nm half-pitch periodic chain of transistors where semiconducting (2H) MoS channel regions are seamlessly connected to metallic-phase (1T') MoS access and contact regions. The resulting 7.5 nm channel-length MoS FET has a low off-current of 10 pA/μm, an on/off current ratio of >10, and a subthreshold swing of 120 mV/dec. The experimental results presented in this work, combined with device transport modeling, reveal the remarkable potential of 2D MoS for future sub-10 nm technology nodes.

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10 nm nominal channel length MoS<inf>2</inf> FETs with EOT 2.5 nm and 0.52 mA/µm drain current

Cited by 19 publications

References 2 publications

High Current Density in Monolayer MoS₂ Doped by AlO_x

High Current Density in Monolayer MoS₂ Doped by AlO_x

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

MoS₂ Field-Effect Transistor with Sub-10 nm Channel Length

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10 nm nominal channel length MoS<inf>2</inf> FETs with EOT 2.5 nm and 0.52 mA/&#x00B5;m drain current

Cited by 19 publications

References 2 publications

High Current Density in Monolayer MoS2 Doped by AlOx

High Current Density in Monolayer MoS2 Doped by AlOx

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

Contact Info

Product

Resources

About

10 nm nominal channel length MoS<inf>2</inf> FETs with EOT 2.5 nm and 0.52 mA/µm drain current

High Current Density in Monolayer MoS₂ Doped by AlO_x

High Current Density in Monolayer MoS₂ Doped by AlO_x

MoS₂ Field-Effect Transistor with Sub-10 nm Channel Length