100-Gb/s optical communications

Sinsky, J.H.; Winzer, Peter J.

doi:10.1109/mmm.2008.931669

Cited by 14 publications

(3 citation statements)

References 46 publications

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“…This direction, however, starts to be constraint by upper bounds in capacity, imposed through fundamental signal-to-noise limitations in transmission channels [20]. At the same time, the analog bandwidth of transmitters only increased slowly over time due to technical challenges in high-speed modulator development and high-speed electronics [21], [22]. Consequently, to further increase in capacity, parallelism has to be included and exploited again more extensively in transmitter designs beyond a few channels and is believed by many to be a necessary next step [23].…”

Section: Parallel Transmitter Architecturementioning

confidence: 99%

Monolithic 300 Gb/s Parallel Transmitter in InP-Based Generic Photonic Integration Technology

Yao

Smit

Wale

2018

IEEE J. Select. Topics Quantum Electron.

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Section: Parallel Transmitter Architecturementioning

confidence: 99%

Monolithic 300 Gb/s Parallel Transmitter in InP-Based Generic Photonic Integration Technology

Yao

Smit

Wale

2018

IEEE J. Select. Topics Quantum Electron.

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“…In particular, there are extremely important applications that demand ADCs with a very wide bandwidth and modest power dissipation. For instance, to satisfy the constantly growing demand for internet backbone networks and data centers, high‐capacity optical networks employing advanced multi‐level modulation formats (i.e., modulation formats with high spectral efficiency) are actively being pursued and are expected to be deployed . Data demodulation and equalization at the receivers of such networks require ADCs with high bandwidth near the line data rate, which is currently between 10 Gbps to 100 Gbps.…”

Section: Introductionmentioning

confidence: 99%

Photonic time‐stretch digitizer and its extension to real‐time spectroscopy and imaging

Fard

Gupta

Jalali

2013

Laser & Photonics Reviews

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Real-time wideband digitizers are the key building block in many systems including oscilloscopes, signal intelligence, electronic warfare, and medical diagnostics systems. Continually extending the bandwidth of digitizers has hence become a central challenge in electronics. Fortunately, it has been shown that photonic pre-processing of wideband signals can boost the performance of electronic digitizers. In this article, the underlying principle of the time-stretch analog-to-digital converter (TSADC) that addresses the demands on resolution, bandwidth, and spectral efficiency is reviewed. In the TSADC, amplified dispersive Fourier transform is used to slow down the analog signal in time and hence to compress its bandwidth. Simultaneous signal amplification during the time-stretch process compensates for parasitic losses leading to high signal-to-noise ratio. This powerful concept transforms the analog signal's time scale such that it matches the slower time scale of the digitizer. A summary of time-stretch technology's extension to highthroughput single-shot spectroscopy, a technique that led to the discovery of optical rouge waves, is also presented. Moreover, its application in high-throughput imaging, which has recently led to identification of rogue cancer cells in blood with record sensitivity, is discussed.

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“…With the explosive evolution of data traffic and multimedia services all over the world, massive amounts of data have to be sent and received in the data communication systems due to the booming services on the internet. After the success of 10‐Gbit/s optical ethernet, the 100‐Gbit/s optical ethernet has been considered to be the ideal candidate for the next generation high‐speed data transmission system [1, 2]. The high‐speed p‐i‐n photodiodes (PDs) are the key components at the receiver end of optical communication systems for hundreds gigabit per second data transmission [3].…”

Section: Introductionmentioning

confidence: 99%

Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

Jiang

Krozer

Johansen

et al. 2011

Micro & Optical Tech Letters

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This article presents a methodology for developing small-signal behavioral electromagnetic (EM) models of p-i-n photodiodes (PDs) for high-speed applications. The EM model includes RC bandwidth limitation effect and transit-time effect. The model is capable of accurately modeling arbitrary complex parasitics of PD chips. It can be used to predict the optical-to-electrical (O/E) response of PDs with various p-i-n junction structures in the frequency domain at the behavioral level. Compared to equivalent circuit models, EM models avoid developing complicated circuit network to represent complex chip parasitics as well as extracting parasitic values and provide straightforward access to EM characteristics of devices

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100-Gb/s optical communications

Cited by 14 publications

References 46 publications

Monolithic 300 Gb/s Parallel Transmitter in InP-Based Generic Photonic Integration Technology

Monolithic 300 Gb/s Parallel Transmitter in InP-Based Generic Photonic Integration Technology

Photonic time‐stretch digitizer and its extension to real‐time spectroscopy and imaging

Behavioral electromagnetic models of high‐speed p‐i‐n photodiodes

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