100-Gbit/s Full-ETDM Transmission Technologies

Derksen, R.H.; Möller, Michael; Schubert, C.

doi:10.1109/csics07.2007.22

Cited by 12 publications

(4 citation statements)

References 5 publications

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“…As the bit rate of the Ethernet has been traditionally increased as multiple of ten, the next logical generation in terms of the data rate will likely be 100 Gbit/s [1]. Therefore, a considerable work has been devoted to the design and fabrication of high-speed and cost effective electronic components for next generation systems [2,3].…”

Section: Introductionmentioning

confidence: 99%

InP DHBT-based ICs for 100 Gbit/s data transmission

Driad

Makon

Hurm

et al. 2008

2008 20th International Conference on Indium Phosphide and Related Materials

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This paper reports state-of-the-art mixed signal ICs, including a distributed amplifier and a multiplexer-core intended for use in 100 Gbit/s optical communication systems (Ethernet). Using a manufacturable InP DHBT technology, exhibiting current gains of > 80 and cut-off frequencies (f(ind T) and f(ind max)) of > 300 GHz, the broadband amplifier achieved a gain of 21 dB and a 3-dB bandwidth of 95 GHz (GxBW > 1 THz), whereas, the 2:1 multiplexer-core has been tested at data rates up to 138 Gbit/s

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Section: Introductionmentioning

confidence: 99%

InP DHBT-based ICs for 100 Gbit/s data transmission

Driad

Makon

Hurm

et al. 2008

2008 20th International Conference on Indium Phosphide and Related Materials

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“…As the bit rate of the Ethernet has been traditionally increased as multiple of ten, the next logical generation in terms of the data rate will likely be 100 Gbit/s [6]. As the bit rate of the Ethernet has been traditionally increased as multiple of ten, the next logical generation in terms of the data rate will likely be 100 Gbit/s [6].…”

Section: Introductionmentioning

confidence: 99%

MMICs and Mixed-Signal ICs Based on III/V Technology for Highest Frequencies and Data Rates

Schlechtweg¹,

Tessmann²,

Kallfass³

et al. 2009

Frequenz

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During the last years, the Fraunhofer IAF developed a variety of state-of-the-art millimeter-wave monolithic integrated circuits (MMICs) and modules for application in active and passive high-resolution imaging systems operating beyond 200 GHz as well as mixed-signal monolithic ICs intended for use in 100 Gbit/s optical communication systems (Ethernet). The MMICs are based on an advanced metamorphic high electron mobility transistor (mHEMT) technology in combination with grounded coplanar waveguide (GCPW) circuit topology. The mixed-signal ICs are manufactured using a state-of-the-art InP double heterojunction bipolar transistor (DHBT) technology. Examples of high-performance circuits from both technologies are presented in this paper.Index Terms -GaAs, InGaAs, InP, millimeter-wave monolithic integrated circuit (MMIC), metamorphic high electron mobility transistor (mHEMT), low-noise amplifier (LNA), voltage controlled oscillator (VCO), mixed-signal IC, double heterojunction bipolar transistor (DHBT), distributed amplifier (DA), multiplexer (MUX), demultiplexer (DEMUX), clock and data recovery (CDR) Brought to you by | Monash University Library Authenticated Download Date |

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“…However, at both data rates the output eye diagrams are clearly open. The module can be used as a driver between a 2:1 multiplexer module and an EA modulator module in future 100 Gbit/s full-electrical time division multiplex onoff keying (OOK) transmission systems [4]. To the best of our knowledge, this is one of the first modulator driver modules with an output voltage swing exceeding 2 V pp at the achieved data rates, regardless of all competing technologies.…”

mentioning

confidence: 98%