100 GHz bandwidth planar GaAs Schottky photodiode

Wang, S.Y.; Bloom, D. M.

doi:10.1049/el:19830376

Cited by 100 publications

(15 citation statements)

References 2 publications

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“…The high-speed properties of Schottky photodiodes have already been shown with reported 3-dB operating bandwidths exceeding 200 GHz [1]- [4]. However, the efficiency of these detectors have been limited, mostly due to the thin absorption region needed for short transit times.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Özbay

Islam

Onat

et al. 1997

IEEE Photon. Technol. Lett.

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Abstract-We report the fabrication and testing of a GaAsbased high-speed resonant cavity enhanced (RCE) Schottky photodiode. The top-illuminated RCE detector is constructed by integrating a Schottky contact, a thin absorption region (In 0:08 Ga 0:92 As) and a distributed AlAs-GaAs Bragg mirror. The Schottky contact metal serves as a high-reflectivity top mirror in the RCE detector structure. The devices were fabricated by using a microwave-compatible fabrication process. The resulting spectral photo response had a resonance around 895 nm, in good agreement with our simulations. The full-widthat-half-maximum (FWHM) was 15 nm, and the enhancement factor was in excess of 6. The photodiode had an experimental setup limited temporal response of 18 ps FWHM, corresponding to a 3-dB bandwidth of 20 GHz.

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Section: Introductionmentioning

confidence: 99%

Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Özbay

Islam

Onat

et al. 1997

IEEE Photon. Technol. Lett.

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“…The frequency responses of optical detectors and receivers are adequate for most present measurement applications. Systems operating up to 20 GHz are now commercially available and operation to 100 GHz has been reported [19].…”

Section: B Modulator Transfer Functionsmentioning

confidence: 99%

Optically sensed EM-field probes for pulsed fields

Kanda

Masterson

1992

Proc. IEEE

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We discuss the characteristics of photonic probes that give them the potential to measure pulsed electromagnetic fields more accurately than has been possible in the past. An overview of system design is presented with particular emphasis placed on the transfer functions of appropriate antennas and electro-optic modulators. Noise sources which limit the sensitivity to low signals are discussed and used to determine the noise equivalent field (NEF).

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“…The ability to simultaneously provide broad spectral responsivity and ultrafast temporal response in a single device has many potential applications, including hybrid microwave/optical communication systems [1], ultrafast time-domain spectroscopy [2], hyperspectral imaging and range-finding [3], and comb-based frequency metrology [4]. Ultrafast detectors, for example photovoltaic or photoconductive detectors based on GaAs and InGaAs, are widely used in the near infrared spectral range [5,6], but it is difficult to find comparably fast detectors for longer mid-and far-infrared wavelengths. HgCdTe and InSb can be used for fast detection in the mid-IR [7], but they fail to detect far-IR signals.…”

Section: Introductionmentioning

confidence: 99%

Universal ultrafast detector for short optical pulses based on graphene

et al. 2015

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Graphene has unique optical and electronic properties that make it attractive as an active material for broadband ultrafast detection. We present here a graphene-based detector that shows 40-picosecond electrical rise time over a spectral range that spans nearly three orders of magnitude, from the visible to the far-infrared. The detector employs a large area graphene active region with interdigitated electrodes that are connected to a log-periodic antenna to improve the long-wavelength collection efficiency, and a silicon carbide substrate that is transparent throughout the visible regime. The detector exhibits a noise-equivalent power of approximately 100 µW·Hz -½ and is characterized at wavelengths from 780 nm to 500 µm.

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100 GHz bandwidth planar GaAs Schottky photodiode

Cited by 100 publications

References 2 publications

Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Fabrication of high-speed resonant cavity enhanced Schottky photodiodes

Optically sensed EM-field probes for pulsed fields

Universal ultrafast detector for short optical pulses based on graphene

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