100 nm device fabrication using ArF resist

Lee, Sung‐Koo; Jung, Jae Chang; Hwang, Young-Sun; Park, Kyu-Dong; Kong, Keun-Kyu; Shin, Ki-Soo

doi:10.1117/12.474257

SPIE Proceedings

2002

DOI: 10.1117/12.474257

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100 nm device fabrication using ArF resist

Sung‐Koo Lee¹,

Jae Chang Jung²,

Young-Sun Hwang³

et al.

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2008

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ArF resist-friendly etching technology

Hayashi¹,

Morikawa²,

Suu³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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ArF resist has very weak plasma resistivity, so linewidth roughness (LWR) and line-edge roughness (LER) generally occur under the conventional etching conditions using perfluorocarbon gases. The main cause of the roughness generation has been thought to be high energy ions. However, decreasing the pressure to 0.4Pa, the roughness was suppressed considerably. So, the origin of the roughness is not depend solely on ion energy, but on the amount of fluorine atoms. Therefore, iodoperfluorocarbon gas was used to decrease the flux density of fluorine atoms. Iodine atoms react with fluorine atoms and interhalogen compounds are formed. The resultant etched surface was very smooth without LWR and LER, even at 1.3Pa.

show abstract

ArF resist-friendly etching technology

Hayashi¹,

Morikawa²,

Suu³

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

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100 nm device fabrication using ArF resist

Cited by 1 publication

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ArF resist-friendly etching technology

ArF resist-friendly etching technology

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