100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

Sayed, Islam; Jain, Nikhil; Steiner, Myles A.; Geisz, John F.; Bedair, S. M.

doi:10.1063/1.4993888

Cited by 17 publications

(4 citation statements)

References 22 publications

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“…The incorporation of QWs or QDs can enhance the I SC , but also can lead to voltage degradation. The inclusion of 100 depleted QWs of GaInAsP/GaInP of 0.8 μm thickness on GaInP SC has boosted the I SC density up to 20.5 mA cm −2 , [ 40 ] whereas our work presents InP QW models with only 9 QWs in the p–i–n region and increases the I SC density up to 22.18 mA cm −2 . Experiment has shown that the InGaAsN/GaAs multiple QW‐based GaAs SJ SC increases the I SC , but at the same time also reduces the open circuit voltage.…”

Section: Introductionmentioning

confidence: 95%

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

Verma

Mishra

2022

Physica Status Solidi (a)

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Quantum wells (QWs) are proven to enhance the short circuit current and voltage preservation measures help in efficiency enhancement with little degradation of open circuit voltage . Herein, an integrated GaInP/Si dual junction solar cell is proposed by incorporating the QWs in the top cell and carrier‐selective passivated contact at the bottom cell of the design. The QW increases the photon absorption of sub‐bandgap energies, buffer layer reduces the misfits between the lattice mismatched layers, and passivation mechanism improves the overall efficiency. Increasing the number of QWs increases the depletion width of QW region. This reduces the carrier lifetime () and increases the recombinations in the QW region. It results in the reduction in passivation quality and, therefore, reduces the open circuit voltage (). QW strain balancing and measures to reduce the threading dislocations has been considered. Also, the wide bandgap GaInP tunnel junction along with highly doped GaAs tunnel junction has been analyzed to observe the parasitic effect. The GaInP/Si‐integrated model achieves efficiency of 33.39% when the QWs are incorporated in the top cell. The effect of wide bandgap tunnel junction is also evaluated using GaInP tunnel junction.

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Section: Introductionmentioning

confidence: 95%

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

Verma

Mishra

2022

Physica Status Solidi (a)

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“…The first proposal of quantum well solar cells was reported in 1990 [ 15 ]. Thereafter, different types of quantum well solar cells have been proposed and analyzed from experimental and theoretical studies [ 16 , 17 , 18 , 19 , 20 , 21 , 22 ]. A general feature of quantum wells is that absorption and recombination processes can be controlled through discrete eigenstates depending on well thickness and depth, allowing for finding the conditions that would result in an improved device performance.…”

Section: Introductionmentioning

confidence: 99%

Analytical Modeling and Optimization of Cu2ZnSn(S,Se)4 Solar Cells with the Use of Quantum Wells under the Radiative Limit

Rodriguez-Osorio,

Morán-Lázaro,

Ojeda-Martínez

et al. 2023

Nanomaterials

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In this work, we present a theoretical study on the use of Cu2ZnSn(S,Se)4 quantum wells in Cu2ZnSnS4 solar cells to enhance device efficiency. The role of different well thickness, number, and S/(S + Se) composition values is evaluated. The physical mechanisms governing the optoelectronic parameters are analyzed. The behavior of solar cells based on Cu2ZnSn(S,Se)4 without quantum wells is also considered for comparison. Cu2ZnSn(S,Se)4 quantum wells with a thickness lower than 50 nm present the formation of discretized eigenstates which play a fundamental role in absorption and recombination processes. Results show that well thickness plays a more important role than well number. We found that the use of wells with thicknesses higher than 20 nm allow for better efficiencies than those obtained for a device without nanostructures. A record efficiency of 37.5% is achieved when 36 wells with a width of 50 nm are used, considering an S/(S + Se) well compositional ratio of 0.25.

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“…The addition of nanostructures such as quantum wells (QWs) to bulk material has been shown to be a potential route to improve device efficiency since it allows the absorption of extra photons with energies lower than the bulk bandgap [8][9][10][11]. That is, when QWs are embedded within an absorber material so that a type I band-alignment is formed, the quantum confinement allows the formation of discretized energy levels, extending the light absorption domain to energies lower than that of the absorber band-gap.…”

Section: Introductionmentioning

confidence: 99%

“…QW solar cells (QWSCs) have received a great deal of attention from the scientific community since their proposal in 1990 [11]. QWSCs based on different compounds have been studied to achieve efficiencies higher than the ones obtained in solar cells without the inclusion of wells [8][9][10][11][12][13]. The addition of tin sulfide selenide (SnSSe) nanostructures in the form of QWs into SnS material constitutes a potential solution to the problem of low solar cell efficiency values.…”

Section: Introductionmentioning

confidence: 99%

A proposal to enhance SnS solar cell efficiency: the incorporation of SnSSe nanostructures

Courel¹,

Beltrán-Bobadilla²,

Sánchez-Rodríguez³

et al. 2021

J. Phys. D: Appl. Phys.

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Tin sulfide (SnS) semiconductor has recently attracted a great deal of attention from the scientific community regarding its application in solar cells. However, SnS solar cell efficiencies are still limited to less than 5%. The incorporation of nanostructures into solar cells has been demonstrated to be a potential route to improve device performance. So far, there have been no reports on the incorporation of nanostructures into SnS solar cells. In this work, a theoretical study on the incorporation of tin sulfide selenide (SnSSe) nanostructures in the form of quantum wells (QWs) into SnS solar cells under the radiative limit is presented, for the first time. In particular, the impact of well number, well thickness, and Se/(S + Se) compositional ratio at the wells, on solar cell characteristics, is evaluated. An efficiency enhancement of 11.1% is found for a SnS/SnSSe QW solar cell, compared to the optimized device without nanostructures, for 50 wells of 54 nm width with a Se/(S + Se) well composition of 0.4 and considering barrier thicknesses of 5 nm, which is a result of the increase in short-circuit current density of 14.5%. The influence of defects at wells and barriers, as well as defects at interfaces, on solar cell behavior is also presented, demonstrating that the introduction of QWs can result in higher efficiencies than that of the device without nanostructures. In this sense, the addition of SnSSe nanostructures to SnS solar cells is introduced as a potential route to promote the absorption of photons with energy lower than the SnS band-gap, while keeping open-circuit voltage values similar to those of a SnS solar cell without nanostructures, thereby increasing solar cell efficiency.

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100-period InGaAsP/InGaP superlattice solar cell with sub-bandgap quantum efficiency approaching 80%

Cited by 17 publications

References 22 publications

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

Analytical Model of InP QWs for Efficiency Improvement in GaInP/Si Dual Junction Solar Cell

Analytical Modeling and Optimization of Cu2ZnSn(S,Se)4 Solar Cells with the Use of Quantum Wells under the Radiative Limit

A proposal to enhance SnS solar cell efficiency: the incorporation of SnSSe nanostructures

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