2016
DOI: 10.1088/1748-0221/11/03/p03011
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100 ps time resolution with thin silicon pixel detectors and a SiGe HBT amplifier

Abstract: A 100µm thick silicon detector with 1mm 2 pad readout optimized for subnanosecond time resolution has been developed and tested. Coupled to a purposely developed amplifier based on SiGe HBT technology, this detector was characterized at the H8 beam line at the CERN SPS. An excellent time resolution of (106±1)ps for silicon detectors was measured with minimum ionizing particles.

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Cited by 29 publications
(34 citation statements)
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“…If one wants to stack multiple conversion layers, they need to be interleaved with fast detectors of lower Z and it deteriorates the performances of the system. An alternative could be the implementation of an active conversion layer using fast and thin silicon detectors [8].…”
Section: Experimental Techniques Limiting Factors and Sensitivity Fomentioning
confidence: 99%
“…If one wants to stack multiple conversion layers, they need to be interleaved with fast detectors of lower Z and it deteriorates the performances of the system. An alternative could be the implementation of an active conversion layer using fast and thin silicon detectors [8].…”
Section: Experimental Techniques Limiting Factors and Sensitivity Fomentioning
confidence: 99%
“…On the other hand, however, local charge deposition variations in different depths of the sensor lead to uncorrectable intrinsic signal fluctuations. Their impact can be mitigated by using thinner sensors [7,8].…”
Section: Introductionmentioning
confidence: 99%
“…According to our simulations, a single layer with the specifications in [28] (100 µm silicon on top of 50 µm Kapton) would give a negligible contribution to the E γ resolution. For a 4-layer system, which would give a 50 ps resolution, comparable with the timing performances of the MEG-II LXe calorimeter, this contribution would be ∼ 300 keV, i.e.…”
Section: Pair Productionmentioning
confidence: 70%
“…An R&D activity is ongoing (TT-PET project [27,28]) to realize a thin monolithic detector (100-300 µm) in a Si-Ge Bi-CMOS process, that contains both the silicon sensor and the frontend electronics, featuring less than 100 ps time resolution for minimum ionizing particles. A dedicated design could be adopted in the μ + → e + γ application, by stacking multiple detector layers in order to improve the resolution accordingly.…”
Section: Pair Productionmentioning
confidence: 99%