100 W peak-power 1 GHz repetition picoseconds optical pulse generation using blue-violet GaInN diode laser mode-locked oscillator and optical amplifier

Koda, Rintaro; Oki, Tomoyuki; Miyajima, Takao; Watanabe, H.; Kuramoto, Masaru; Ikeda, Masao; Yokoyama, Hiroyuki

doi:10.1063/1.3462942

Cited by 39 publications

(26 citation statements)

References 21 publications

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“…Recently, this has been demonstrated once more for a GaInN laser diode with 100 W peak power, 1 while Wu et al 2 reported output powers for AlGaN/GaN high electron mobility transistors (HEMTs), which reached a density of 32.2 W mm À1 . In theory, even higher power outputs are possible.…”

Section: Introductionmentioning

confidence: 99%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Section: Introductionmentioning

confidence: 99%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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“…To allow for a precise estimation of the QD-SOA gain and its output power, it is important to determine the amount of noise or ASE introduced by the QD-SOA during the amplification process [64]. It is known that with increasing input power and at a given SOA gain current, the amount of ASE reduces [65], as depicted in Figure 2.36 for the case of CW amplification.…”

Section: Qd-soa Noisementioning

confidence: 99%

Ultra‐Short‐Pulse QD Edge‐Emitting Lasers

Breuer

Syvridis

Рафаилов

2014

The Physics and Engineering of Compact Quantum Dot‐based Lasers for Biophotonics

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IntroductionHigh-power, electrically pumped edge-emitting monolithic semiconductor lasers based on InAs/GaAs quantum dots (QDs) offer significant advantages including ultra-short pulse generation due to ultrafast gain and absorption recovery [1, 2] and emission energies in the near-infrared spectral range [3]. Owing to their inherent inhomogeneous QD size distribution, a broadening of gain and absorption profile is realized, leading to broadband wavelengths emission. This inhomogeneous broadening together with ultrafast carrier dynamics is particularly advantageous for ultrafast applications including the generation, propagation, and amplification of subpicosecond optical pulses with high pulse peak power [4] and the generation of spectrally tunable emission [5,6]. The reduced density of states allows for the exploitation of QD materials in harnessing spectral versatility in novel dual-state emission. The spectral coverage of these QD lasers perfectly matches a wide range of relevant biophotonic applications including nonlinear excitation imaging techniques. The unique combination of efficient light generation, ultrafast carrier dynamics, and broadband gain bandwidth can deliver exclusive advantages in ultrafast microelectronic scale components, thereby stimulating major advances in ultrafast science and technology.In order to enable initial device design and optimization of novel pulse generating QD lasers and amplifiers, a new and efficient theoretical framework is presented as briefly introduced in Section 2.2. This framework takes into account specifically fundamental aspects associated with QD gain materials and allows for modeling of both continuous-wave (CW) emission and ultra-short pulse generation via passive mode-locking (PML) and subsequent amplification. The obtained understanding is applied to technologically realize and optimize QD laser and amplifier structures with particularly broad gain bandwidth enabling spectral versatility through broadband tunability of CW-emission generated in the visible wavelength range by second-harmonic-generation (SHG). This broad wavelength range is accessible only by the QD features as presented in Section 2.3. Novel functionalities based on the broad gain bandwidth and sophisticated QD laser design are explored inThe Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics, First Edition. Edited by Edik U. Rafailov.

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“…In this article, we first discuss generation of clean optical pulses with a 3 ps pulse duration from an external-cavity mode-locked oscillator employing a bisectional GaInN laser diode (LD). We also discuss high peak power optical pulse generation of over 100 W from an all-semiconductor MOPA system using a single stage SOA 10 . Key technologies for generating high-peak power optical pulses include the generation of clean optical pulses from MLLD and suppression of amplified spontaneous emission in the SOA which results in effective amplification of optical pulses.…”

Section: Introductionmentioning

confidence: 99%

High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers

Koda

Oki

Miyajima

et al. 2011

Novel in-Plane Semiconductor Lasers X

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We present optical pulse generation with 100 W peak power, 3 ps temporal duration, and 1 GHz repetition from a GaInN master oscillator power amplifier (MOPA). An external cavity GaInN laser diode is passively mode-locked to generate 4 W peak power optical pulses as a master oscillator, and a semiconductor optical amplifier (SOA) effectively amplified these to a high peak power of more than 100 W. Two major factors that contributed to effective amplification of optical pulses were the generation of clean optical pulses without sub-pulse components by the GaInN mode-locked laser diode and suppression of amplified spontaneous emission in the SOA. This novel high-peak-power pulse source is used to induce multi-photon absorption to create sub-micrometer recording marks in a bulk plastic recording media. The realization of an all-semiconductor pulse source is a significant breakthrough towards a practical 3D optical data storage system.

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100 W peak-power 1 GHz repetition picoseconds optical pulse generation using blue-violet GaInN diode laser mode-locked oscillator and optical amplifier

Cited by 39 publications

References 21 publications

Realising epitaxial growth of GaN on (001) diamond

Realising epitaxial growth of GaN on (001) diamond

Ultra‐Short‐Pulse QD Edge‐Emitting Lasers

High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers

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