1000-V, 300-ps pulse-generation circuit using silicon avalanche devices

Benzel, D. M.; Pocha, M.D.

doi:10.1063/1.1138504

Cited by 47 publications

(27 citation statements)

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“…6,7,9,11,12 In both cases we deal with a collective phenomenon of superfast propagation. It is based on avalanche multiplication of the already existing carriers due to impact ionization in a finite narrow region of the device, followed by screening of the electrical field due to Maxwell relaxation in the adjacent spatial region.…”

Section: Discussionmentioning

confidence: 99%

“…1 In this article we demonstrate that the threshold of tunneling ionization in the bulk of a Si p ϩ -n -n ϩ structure can be reached under the same experimental conditions as for triggering impact ionization fronts. [6][7][8][9] Typically an ionization front is triggered by applying a voltage pulse with a steep slope (у1 kV/ns) to the p ϩ -n -n ϩ structure in reverse direction. 6,9,10 In structures with kilovolt pϪn junctions and large cross-sections, this process is used for sharpening electrical pulses.…”

Section: Introductionmentioning

confidence: 99%

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Tunneling-assisted impact ionization fronts in semiconductors

Rodin

Ebert

Hundsdorfer

et al. 2002

Journal of Applied Physics

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Rodin, P.; Ebert, U.M.; Hundsdorfer, W.; Grekhov, I.V. Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We discuss a type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an extremely sharp voltage ramp (ϳ10 kV/ns) is applied in reverse direction to a Si p ϩ -n -n ϩ structure that is connected in series with an external load. The triggering occurs after a delay of 0.7 to 0.8 ns. The maximal electrical field at the front edge exceeds 10 6 V/cm. The front velocity v f is 40 times faster than the saturated drift velocity v s . The front passes through the n-base with a thickness of 100 m within approximately 30 ps, filling it with dense electron-hole plasma. This passage is accompanied by a voltage drop from 8 kV to a voltage in the order of 10 V. In this way a voltage pulse with a ramp up to 500 kV/ns can be applied to the load. The possibility to create a kilovolt pulse with such a voltage rise rate sets new frontiers in pulse power electronics.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Tunneling-assisted impact ionization fronts in semiconductors

Rodin

Ebert

Hundsdorfer

et al. 2002

Journal of Applied Physics

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“…Возможность сверхбыстрого -субнаносекундного переключения из блокирующего в проводящее состоя-ние высоковольтной кремниевой диодной p + N 0 n + -струк-туры была показана в [1,2], а затем подтверждена в [3]. После этого был проведен большой комплекс исследова-ний, в результате которых диодный лавинный переклю-чатель -обостритель высоковольтных импульсов стал широко используемым прибором мощной импульсной техники субнаносекундного диапазона.…”

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Мощный Полупроводниковый Обостритель Импульсов С Субнаносекундным Быстродействием

Грехов¹,

Люблинский²,

Юсупова³

2017

Журнал Технической Физики

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“…[1][2][3][4][5][6][7][8][9] The front passage fills the structure with dense electron-hole plasma and hence leads to the transition of the reversely biased p-n junction from lowconducting to high conducting state. Apart from microwave TRAPATT ͑TRApped Plasma Avalanche Triggered Transit͒ diodes 1,2 triggering of impact ionization fronts has been observed in high-voltage p + -n-n + diodes manufactured from both Si ͑Refs.…”

Section: Introductionmentioning

confidence: 99%

“…[3][4][5][6][7][8][9] In the respective limiting case v f / v s + 1 the effect of transport asymmetry vanishes. As it follows from Eqs.…”

mentioning

confidence: 99%

Theory of superfast fronts of impact ionization in semiconductor structures

Rodin¹,

Ebert

Minarsky³

et al. 2007

Journal of Applied Physics

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Rodin, P.; Ebert, U.M.; Minarsky, A.; Grekhov, I.V. Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We present an analytical theory for impact ionization fronts in reversely biased p + -n-n + structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width, and the voltage over the n base as functions of front velocity and doping of the n base. The theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.

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1000-V, 300-ps pulse-generation circuit using silicon avalanche devices

Cited by 47 publications

References 1 publication

Tunneling-assisted impact ionization fronts in semiconductors

Tunneling-assisted impact ionization fronts in semiconductors

Мощный Полупроводниковый Обостритель Импульсов С Субнаносекундным Быстродействием

Theory of superfast fronts of impact ionization in semiconductor structures

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