101 GHz f/sub Tmax/ SiGe:C HBT integrated into 0.25 μm CMOS with conventional LOCOS isolation

Yamagata, Hideo; Yanagawa, Shusaku; Komoto, Takeyoshi; Bairo, Masaaki; Kiyota, Yukihiro; Yoneda, Shojiro; Oishi, Masato; Kuranouchi, Atsushi; Arai, Chihiro

doi:10.1109/essder.2004.1356524

Cited by 1 publication

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“…It uses local oxidation of silicon (LOCOS) isolation and blanket SiGeC epitaxy; thus it has a low complexity. 5) Since the intrinsic and extrinsic bases are simultaneously grown by blanket epitaxy, we cannot independently control the profiles in these layers. Hence, it is an important and difficult issue to optimize the intrinsic and extrinsic base processes for HBTs using blanket epitaxy.…”

Section: Introductionmentioning

confidence: 99%

94-GHz f_T, 0.4-dB NF_min HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

Kiyota¹,

Yamagata²,

Bairo³

et al. 2005

Jpn. J. Appl. Phys.

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The characteristics of a spark chamber containing a neon-alcohol mixture are described with particular reference to the variation of efficiency with the parameters of the pulse and the determination of the spark formation time. An interpretation of the characteristics is made on the basis of a model for spark formation and the validity of the mechanism is examined by an internal comparison of the data.The results are used to derive the electron drift velocity as a function of field over the range of € / p from 0.05 to 4 v cm-'(mmHg)-' and to determine the probability of a single electron initiating a spark.Measurements are also reported on the geometrical properties of the sparks and conditions are studied both for minimizing the angle between the direction of a particle trajectory and the ensuing spark, and for reducing the error in location of the trajectory.

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Section: Introductionmentioning

confidence: 99%

94-GHz f_T, 0.4-dB NF_min HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

Kiyota¹,

Yamagata²,

Bairo³

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

101 GHz f/sub Tmax/ SiGe:C HBT integrated into 0.25 μm CMOS with conventional LOCOS isolation

Cited by 1 publication

References 3 publications

94-GHz f_T, 0.4-dB NF_min HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

94-GHz f_T, 0.4-dB NF_min HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

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101 GHz f/sub Tmax/ SiGe:C HBT integrated into 0.25 μm CMOS with conventional LOCOS isolation

Cited by 1 publication

References 3 publications

94-GHz fT, 0.4-dB NFmin HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

94-GHz fT, 0.4-dB NFmin HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

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Product

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About

94-GHz f_T, 0.4-dB NF_min HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy

94-GHz f_T, 0.4-dB NF_min HBT with Optimized Si Cap and Extrinsic Base Using Blanket SiGeC Epitaxy