International Electron Devices Meeting 1991 [Technical Digest]
DOI: 10.1109/iedm.1991.235473
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1040*1040 element PtSi Schottky-barrier IR image sensor

Abstract: A high density infrared image sensor has been developed for thermal imaging in the 3-5 pn infrared band. The array size is 1040x1040. The detector is a platinum silicide (PtSi) Schottkybanier diode. The charge sweep device (CSD) architecture is used for the-device in d e r to realize a large f i l l factor and a high saturation level. The device is fabricated with a 1.5 pm minimum feature size and has a large fill factor of 53% in spite of the small pixel size (17x17 pm2). The saturation level is improved by i… Show more

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Cited by 16 publications
(6 citation statements)
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“…Only a fraction of incoming light to the IR2 detector is converted to electrons via the photo-electric effect at the thin (a few nanometers) layer of platinum silicide (PtSi), leaving a much larger fraction of light unused (Akiyama et al, 1994;Yutani et al, 1991). Consequently, multiple reflections of "unused" light can occur in the Si substrate (transparent for 2μm NIR light), resulting in the extended PSF seen in the IR2 images (Figure 2).…”
Section: Investigating the Cause Of Contamination (Ir2 Point-spread F...mentioning
confidence: 99%
“…Only a fraction of incoming light to the IR2 detector is converted to electrons via the photo-electric effect at the thin (a few nanometers) layer of platinum silicide (PtSi), leaving a much larger fraction of light unused (Akiyama et al, 1994;Yutani et al, 1991). Consequently, multiple reflections of "unused" light can occur in the Si substrate (transparent for 2μm NIR light), resulting in the extended PSF seen in the IR2 images (Figure 2).…”
Section: Investigating the Cause Of Contamination (Ir2 Point-spread F...mentioning
confidence: 99%
“…After confirming the potential of PtSi SB technology with the 32 × 64 IRFPA, we concentrated on enlarging the array format by exploiting Si LSI process technology and developed a 256 × 256 IRFPA in 1983, (9) 512 × 512 IRFPA in 1987, (10,11) and 1040 × 1040 IRFPA in 1991. (12) The last device was the first megapixel FPA for thermal imaging. These devices are shown in Fig.…”
Section: Toward Higher Spatial Resolutionmentioning
confidence: 99%
“…Table 2.2 summarizes the specifications and performances of SB FPAs with higher resolutions than a 240 000 pixels element. On average, the array size of the PtSi SB FPA has been doubled every 18 months [9], and a 1040 6 1040 element SB FPA has already been reported [19]. As for TV-compatible FPAs, the array size has been increased to over 400 000 pixels, and NETDs (noise equivalent temperature differences) of well below 0.1 K have been achieved with a frame rate of 30 Hz.…”
Section: Si-based Fpas With Photoemissive Detectorsmentioning
confidence: 99%
“…Note that the maximum charge handling capacities of the CSD FPAs are much higher than those with other readout architectures. Figure 2.5 is a photograph of a 1040 6 1040 element PtSi SB FPA mounted in a 40-lead ceramic package [19]. The chip size of the device is 20.6 6 19.4 mm 2 .…”
Section: Si-based Fpas With Photoemissive Detectorsmentioning
confidence: 99%