2020
DOI: 10.1016/j.jlumin.2020.117372
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1045 nm purely gain coupled semiconductor laser based on periodic electric injection

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“…In our previous studies, gain-coupled DFB semiconductor lasers with wavelengths of 795 nm, 905 nm, 990 nm, and 1045 nm were fabricated based on periodic electrodes windows and surface grating structures [17][18][19][20]. The periodic electrical injection of the surface p-electrode caused the quantum wells in the active region to generate periodic gain differences to realize the gain coupling effect and enable the device to achieve stable single longitudinal mode output [21][22][23].…”
Section: Introductionmentioning
confidence: 99%
“…In our previous studies, gain-coupled DFB semiconductor lasers with wavelengths of 795 nm, 905 nm, 990 nm, and 1045 nm were fabricated based on periodic electrodes windows and surface grating structures [17][18][19][20]. The periodic electrical injection of the surface p-electrode caused the quantum wells in the active region to generate periodic gain differences to realize the gain coupling effect and enable the device to achieve stable single longitudinal mode output [21][22][23].…”
Section: Introductionmentioning
confidence: 99%