105-GHz bandwidth metal-semiconductor-metal photodiode

Zeghbroeck, B.J. Van; Patrick, W.; Halbout, J.‐M.; Vettiger, P.

doi:10.1109/55.17833

Cited by 133 publications

(15 citation statements)

References 12 publications

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“…These devices have attracted great deal of attention due to their ease of fabrication and process integrability with compound semiconductor electronic devices, specifically Metal Semiconductor Field-Effect Transistors (MESFETs) and Modulation Doped Field-Effect Transistors (MODFETs) both of which have found increasing application in MMIC circuits. In addition to monolithic integrability, MSM photodetectors have h g h speed of response, easily in tens of Gigahertz with highest cut-off frequency of 510 Gigahertz recently reported [ 11, low dark current, low noise, and improved sensitivity compared to PIN diodes [2], [3]. These devices are hence ideal as input ports to circuits merging photonic and MMIC circuits…”

Section: Introductionmentioning

confidence: 99%

Transit Time and RC Time Constant Trade-offs in MSM Photodetectors

Nabetl

Lioul²,

Paolella

1993

IEEE Princeton Section Sarnoff Symposium

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The speed of response of Metal-Semiconductor-Metal (MSM) devices is determined by both the RC time constant and transit time of the optically generated carriers. A trade-off exists between these two parameters; reduction of transit time will increase the RC time constant, hence miniaturization of dimensions will not always increase speed of response. We have derived expressions which show that given the total available area, and minimum geometry allowed by the technology, what is the optimal design, both in terms of rise time and gain-bandwidth product, of the detector. This allows substantial improvement in device response with no processing penalty. IntroductionMetal-Semiconductor-Metal (MSM) photodetectors are simple planar structure consisting of two Schottky metal contacts on a semi-insulating semiconductor as schematically shown in Figure 1 in the usual interdigital configuration. These devices have attracted great deal of attention due to their ease of fabrication and process integrability with compound semiconductor electronic devices, specifically Metal Semiconductor Field-Effect Transistors (MESFETs) and Modulation Doped Field-Effect Transistors (MODFETs) both of which have found increasing application in MMIC circuits. In addition to monolithic integrability, MSM photodetectors have h g h speed of response, easily in tens of Gigahertz with highest cut-off frequency of 510 Gigahertz recently reported [ 11, low dark current, low noise, and improved sensitivity compared to PIN diodes [2],[3]. These devices are hence ideal as input ports to circuits merging photonic and MMIC circuitsThe speed of response of MSM devices is determined by the transit time of the optically generated carriers between the two contacts, the RC time constant of the device, recombination lifetime of the carriers, and traps in the substrate. The last factor can be reduced by epitaxial growth of the photosensitive area. Recombination lifetime contributes to the falling edge of time response and, due to reduced number of recombination centers in an epitaxially grown sample, does not influence FWHM calculations. The speed of device response is then dominated by the first two factors and can be approximated by where tr is the rise time, tt is transit time, and t RC is the RC time constant. The cut-off frequency, or 3dB bandwidth, of the device is then calculated from 0.35 f3db = 7 r L A trade-off exists between the two components of rise time; reduction of the distance between the interdigitated fingers, parameter g in Figure 1, will reduce the transit time of the optically generated carriers between electrodes but will increase the capacitance of the interdigitated structure. Hence, miniaturization of dimensions will not necessarily increase speed of response. A cross-over point exists beyond which reduction of distance, and hence geometry, will degrade performance. This optimal point is determined from (1) by analyzing its components as follows. metal film W semiconducmr substrate Fig. 1 Structure of the MSM Photodetector; g = finger ...

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Section: Introductionmentioning

confidence: 99%

Transit Time and RC Time Constant Trade-offs in MSM Photodetectors

Nabetl

Lioul²,

Paolella

1993

IEEE Princeton Section Sarnoff Symposium

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“…Metal-semiconductor-metal (MSM) junctions are a standard photodetector [1,2] for high-speed applications due to fast response time and long device lifetime, high gain, small device area, and simple manufacturing compatible with standard field effect transistor (FET) processes.…”

Section: Introductionmentioning

confidence: 99%

Metal-semiconductor-metal electron detector with nano-hole array structure to improve the electricity characteristic and enhance the performance

Lee

et al. 2011

The 4th IEEE International NanoElectronics Conference

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In this work, we first fabricated the conventional metal-semiconductor-metal (MSM) interdigitated electron detector with aluminum contact as the control group, then used e-beam lithography system and reactive ion etcher (RIE) to fabricate nano-hole array structure on the contact area and used RIE to fabricate the periodic rectangle trench in the active area of the electron detector as another MSM interdigitated electron detector at the same time as the experimental group. According to the experimental data, we found that the electricity characteristic and the performance of the electron detector with nano-hole array structure which were better than those without the nano-hole array structure.

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“…A detection bandwidth of 105 GHz together with a responsivity of 0.1 A/W have been reported for a metalsemiconductor-metal (MSM) photodiode. [1] The most common approach to increasing the bandwidth in MSM photodiodes (at least up to 100 GHz) is to shorten the carrier transit time by reducing the electrode spacing. However, achievement of bandwidths > 100 GHz requires more than simply reducing further the electrode spacing.…”

Section: Introductionmentioning

confidence: 99%

Multi-Hundred Gigahertz Photodetector Development Using LT GaAs

et al. 1991

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We report on the development of a new, integrable photoconductive-type detector based on low-temperature-grown GaAs. The detector has a response time of 1.2 ps and a 3-dB bandwidth of 375 GHz. The responsivity is 0.1 A/W. This is the fastest photodetector reported to date. We discuss the unique properties of this device, including its performance as functions of both light intensity and bias voltage.

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105-GHz bandwidth metal-semiconductor-metal photodiode

Cited by 133 publications

References 12 publications

Transit Time and RC Time Constant Trade-offs in MSM Photodetectors

Transit Time and RC Time Constant Trade-offs in MSM Photodetectors

Metal-semiconductor-metal electron detector with nano-hole array structure to improve the electricity characteristic and enhance the performance

Multi-Hundred Gigahertz Photodetector Development Using LT GaAs

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