2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers 2015
DOI: 10.1109/isscc.2015.7062994
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11.2 A 10.8ps-time-resolution 256×512 image sensor with 2-Tap true-CDS lock-in pixels for fluorescence lifetime imaging

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Cited by 19 publications
(18 citation statements)
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“…For example, they are used in Fluorescence Lifetime Imaging Microscopy (FLIM) sensors where a light pulse is modulated with the capture window that is shifted in picosecond-order delay steps for a total range of tens of picoseconds [2]. Furthermore, high-resolution DLLs are used in the compensation for PVT variations and any delay mismatch that may be caused to signals during the operation of many high-frequency VLSI circuits [3].…”
Section: Introductionmentioning
confidence: 99%
“…For example, they are used in Fluorescence Lifetime Imaging Microscopy (FLIM) sensors where a light pulse is modulated with the capture window that is shifted in picosecond-order delay steps for a total range of tens of picoseconds [2]. Furthermore, high-resolution DLLs are used in the compensation for PVT variations and any delay mismatch that may be caused to signals during the operation of many high-frequency VLSI circuits [3].…”
Section: Introductionmentioning
confidence: 99%
“…FluoCam’s signal processing capabilities, as well as its IRF and precise gating control, which are at a comparable level with other existing time-gated solid state FLIM sensors [ 45 47 ], did eventually enable true in vivo discrimination of the subtle lifetime differences between bound and unbound ICG-modified fluorophores (10% level in our case).…”
Section: Discussionmentioning
confidence: 63%
“…In parallel we will be working on improving its performance, towards our goal of designing a next-generation real-time SPAD-based instrument to study how the lifetime information could improve fluorescence-guided surgical procedures in the operating theatre. This activity focuses on the one hand on the improvement of the fill-factor at the pixel level - to bring it on par with other existing solid-state FLIM sensors [ 45 47 ] - and on the photon detection probability increase in the near infrared [ 48 ], on the other hand on the implementation of more photon-efficient architectures such as TCSPC [ 49 ]. We believe that these results are within reach, in particular by migrating to more advanced CMOS technology nodes and/or 3D stacking approaches, thus paving the way to the clinical use of fluorescence lifetime data.…”
Section: Discussionmentioning
confidence: 99%
“…The modulation gates (G 1 through G 8 ) are implemented using a lateral electric field charge modulation (LEFM) [19]. The modulated charge at each tap is stored in a storage diode (SD) [20,21]. The SD basically has a structure of a pinned diode, and while having a sufficient amount of full-well capacitance (FWC) and helping the charge transfer from the SD to the floating diffusion (FD), a charge-transfer assisting (CA) gate is used for each tap [17].…”
Section: Distance Calculation Algorithmmentioning
confidence: 99%