110 GHz vector modulator for adaptive software-controlled transmitters

McPherson, D.S.; Seo, Hwa-Chang; Jing, Young-Lae; Lucyszyn, S.

doi:10.1109/7260.905954

Cited by 22 publications

(8 citation statements)

References 4 publications

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“…Table I compares state-of-the-art mmwave quadrature modulator ICs with this work. Most reported analog vector modulators are based on reflective type cold pHEMTs [3]- [5]; for quadrature generation, Lange coupler of λ/4 dimension are used extensively [3]- [5], but several other approaches have been reported. In most cases, however, the chip size tends to be large and impact the cost.…”

Section: Discussionmentioning

confidence: 99%

“…One main challenge in implementing such circuit is the generation of quadrature carrier signals. Several examples of successful approaches are reported in literature, relying on various passive blocks: branch-line [2], Lange [3]- [5] and tandem couplers [6], as well as reflective-type phase shifters [7]. All those approaches tend to require large areas even at mm-wave frequencies and are generally passive solutions: this causes signal power loss and defers its compensation to other circuit blocks, thus further increasing die area and power consumption.…”

Section: Introductionmentioning

confidence: 99%

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Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters

Hellfeld

Carta

Ellinger

2012

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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This paper presents the design and characterization of a vector quadrature modulator integrated circuit, fabricated in a 0.25 µm SiGe BiCMOS technology for use in a QPSK wireless transmission system at 60 GHz. The approach chosen for narrowband quadrature generation allows the integration on a 0.98 mm×0.88 mm area, significantly smaller than other reported mm-wave quadrature modulator ICs. The circuit consists of two active double-balanced mixers and a network of transmission lines, whose impedances and lengths are designed to provide simultaneously quadrature differential signals and power matching to 50 Ω for the high-frequency ports of the mixers. On-wafer characterization of the modulator showed an amplitude error of only 0.3 dB and a phase error of 20 • , suitable for singlecarrier QPSK communications. For optimal operation, the circuit requires -3 dBm of carrier power and 16 mA of bias current from a 3 V supply.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters

Hellfeld

Carta

Ellinger

2012

2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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show abstract

“…However, the impedance value has a significant effect on the performance of the amplitude modulator [7]. Assuming the impedance of the Lange coupler is and the port impedance is 50 , the -parameter matrix of the unbalanced bi-phase amplitude modulator is given by (11) where is the reflection coefficient of the cold-pHEMT termination given by (12) The maximum magnitude of the transmission coefficient can be achieved when the cold-pHEMT is in the on-state or offstate. For an ideal bi-phase amplitude modulator, the maximum in-phase and antiphase transmission coefficients have the equal amplitude and a 180 phase shift.…”

Section: B Unbalanced Bi-phase Amplitude Modulatormentioning

confidence: 99%

An Efficient Technique for Designing High-Performance Millimeter-Wave Vector Modulators With Low Temperature Drift

Hou¹,

Qiu

et al. 2008

IEEE Trans. Microwave Theory Techn.

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Recently the demand for high-performance low-cost vector modulators for millimeter-wave direct carrier modulation applications is increasing. An efficient technique to improve the performance of the vector modulators has been proposed in this paper accordingly. This technique highlights the effect of the Lange coupler characteristic impedance and the cold pseudomorphic HEMT (pHEMT) total gatewidth on the performance. It is demonstrated by investigating two types of vector modulators, which employ unbalanced and balanced topologies. Furthermore, to reduce the temperature drift, a concise analysis of the thermal behavior of the vector modulators has been carried out. Based on the proposed technique, two types of monolithic vector modulators have been realized at 40 GHz on a 100-m-thick GaAs substrate with 0.15-m cold-pHEMT devices. The static constellations were obtained by using an automatic measurement system, and the temperature drifts were characterized by the measurement data from 55 C to 70 C. The results show that the technique is suitable for millimeter-wave vector modulator designs. Index Terms-HEMT, millimeter-wave circuits, monolithic microwave integrated circuits (MMICs), vector modulator.

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“…For systems using single-end feeds, Cartesian vector-sum phase shifters controlling the amplitudes of four quadrature signals with proper power combining scheme can offer a broader operation bandwidth. The vector modulator concept was introduced first to generate 64-QAM at 110 GHz [2], and later to provide gain/phase control for a feedforward power amplifier at 28 GHz [3]. Rearranging the four amplitude-control devices in the manner described in the block diagram of Fig.…”

Section: Introductionmentioning

confidence: 99%

A 275 GHz Active Vector-Sum Phase Shifter

Quan

Heo

Urteaga

et al. 2015

IEEE Microw. Wireless Compon. Lett.

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Terahertz vector-sum phase shifters capable of 360 phase control over the frequency range of 240 to 310 GHz are presented. Because the impedance mismatch of the variable-gain amplifiers employed in the phase shifter determines the flatness of the offset phases, a new broadband VGA design with its input and output impedances unaffected by dc bias is introduced. The measured results on the phase shifter fabricated using 0.25 m InP HBT technology show incremental phase shifts of 45 with an average RMS offset phase error of 3.6 and insertion loss of to for eight basis dc bias states. Index Terms-InP HBT, phase shifter, terahertz IC, variablegain amplifier (VGA).

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110 GHz vector modulator for adaptive software-controlled transmitters

Cited by 22 publications

References 4 publications

Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters

Wideband 60 GHz SiGe-BiCMOS vector modulator for ultra-high-datarate wireless transmitters

An Efficient Technique for Designing High-Performance Millimeter-Wave Vector Modulators With Low Temperature Drift

A 275 GHz Active Vector-Sum Phase Shifter

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