112Gb/s PAM4 electro-optic modulator based on Thin-film LN-on-insulator

Shang, Chenglin; Pan, An; Hu, Changran; Li, Tingan; Xia, Jinsong; Zeng, Cheng

doi:10.1364/oedi.2019.ow1b.3

Cited by 2 publications

(2 citation statements)

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“…The length of uncoupling region L 2 is set to 300 μm, and R is set to 130 μm. For a more detailed design process and methods of these integrated components included in this article, please refer to the references [25][26][27][28] .…”

Section: Design and Simulationmentioning

confidence: 99%

“…Due to the high performance of components of the microwave photonic sideband selector, it supports working bandwidth up to 40 GHz, with undesired sidebands effectively suppressed by more than 25 dB. The related design methods and principles have been reported by our research team previously [25][26][27][28] . The insertion loss of a packaged microwave photonic sideband selector is approximately 11 dB, occupying a volume of 35 mm × 10 mm × 5 mm.…”

Section: Introductionmentioning

confidence: 99%

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Microwave photonic sideband selector based on thin-film lithium niobate platform

Ding,

Shang,

et al. 2024

中国光学快报

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We propose and demonstrate an integrated microwave photonic sideband selector based on the thin-film lithium niobate (TFLN) platform by integrating an electro-optic Mach-Zehnder modulator (MZM) and a thermo-optic tunable flat-top microring filter. The sideband selector has two functions: electro-optic modulation of wideband RF signal and sideband selection. The microwave photonic sideband selector supports processing RF signals up to 40 GHz, with undesired sidebands effectively suppressed by more than 25 dB. The demonstrated device shows great potential for TFLN integrated technology in microwave photonic applications, such as mixing and frequency measurement.

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Section: Design and Simulationmentioning

confidence: 99%