11B+ implantation and postimplant anneal studies in Hg1− Cd Te

Kao, T.-M.; Sigmon, T. W.

doi:10.1016/0168-583x(87)90909-8

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…According to Ito et al (1), after nitridation the distribution of nitrogen in the resulting film is monotonically decreasing from the surface; however, a quite uniform distribution of nitrogen was obtained by Hayafuji and Kajiwara (2). In more recent results, there seems to be a general agreement that the nitrogen concentration in the nitrided films is higher at the surface and near the insulator (oxynitride)/ silicon interface than elsewhere (3)(4)(5)(8)(9)(10)(11)(12).…”

Section: Discussionmentioning

confidence: 92%

“…Interactions between the species listed in Eq. [1]- [4] are also possible, but not as important as reactions [1]- [4] for the oxidation studies O8 + hv k < 310 nm ---> O(tD) + O2(1A~) [3] O8 + hv X < 267 nm --) O(1D) + O2(1~.g +) [4] When using N=O for the growth ambient, the photochemical processes are quite complex. The major reaction of interest is Eq.…”

Section: Resultsmentioning

confidence: 99%

“…It appears to offer many potential advantages over the normally grown SIO2; however, first many problems have to be solved before nitrided oxide films can be used in practical devices. Among the most important problems concerning nitridation is how nitrogen distributes in the resulting films and what is the growth kinetics of nitridation (3)(4)(5). Although different experimental results have been reported (1-5) and several kinetic models to explain individual phenomena of nitridation have been proposed (1, 2, 4, 5), a satisfactory explanation of the overall nitridation kinetics in general is still lacking.…”

Section: Discussionmentioning

confidence: 99%

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Growth and Characterization of Hg1 − x Cd x Te Photochemical Native Oxides

Kao¹,

Sigmon²

1988

J. Electrochem. Soc.

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We report results on the growth of Hg~_~Cd=Te native oxides using ultraviolet radiation. This method provides a dry, clean, low-temperature process for growing native oxides on Hg~ xCdxTe. Measurements of the stoichiometry and thicknesses of these oxides are presented and possible growth mechanisms discussed. The stoichiometry of the oxide/Hg~_~CdxTe interface after annealing is examined with regard to the encapsulation properties of these layers. Preliminary results obtained for high-temperature photochemical oxidation are also reported.Successful fabrication of Hgl_=CdxTe infrared detector arrays requires passivation of the Hg~_=Cd=Te surface. Consequently, the growth of native oxides on Hgl-xCd=Te is of considerable importance for this technology, especially when the electrical properties are strongly influenced by surface states and/or recombination velocities. Native oxides are generally used to passivate and stabilize surfaces so that the electrical performance of devices do not change during storage or operation (1). Also, as reported earlier (2, 3), photochemically grown native oxides are useful as an encapsulant for the annealing of Hgl-=CdxTe.Although anodic oxidation is probably the most common oxidation technique used for passivating Hgl_=Cd=Te surfaces in use (1), photochemically grown native oxides of Hgl_=Cd=Te exist which result in relative low fixed charge (Nf~ = 101~ cm -2) and fast interface state (Nss = 10 l~ cm -2 eV -1) densities (4). Photochemical oxidation in this work means that the Hgl_=Cd=Te surface is exposed to ultraviolet radiation (from a low-pressure mercury ]amp) in an 02 or N20 ambient. The UV generates electronically excited oxygen atoms as the oxidizing agent for forming the native oxide layer. A fundamental understanding of the stoichiometry, growth mechanisms, and interface properties of photochemically grown oxides is therefore of interest from both a technological and scientific point of view.Studies of the stoichiometry of photochemical oxides have been previously .reported using x-ray photoelectron spectroscopy (XPS) (5-7). However, preferential sputtering, an effect often observed in XPS measurements, causes difficulty in accurately determining the oxide composition, especially the Hg content. In order to more accurately determine the stoichiometry and other properties of these oxides, further investigation using complementary measurement techniques is needed. In this work, we evaluate the film stoichiometry using high depth resolution Rutherford backscattering (RBS) and Auger electron spectroscopy (AES). The oxide stoichiometry and major photochemical reactions are studied and discussed. Also, the encapsulation properties of this oxide for annealing are evaluated.

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Section: Discussionmentioning

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Growth and Characterization of Hg1 − x Cd x Te Photochemical Native Oxides

Kao¹,

Sigmon²

1988

J. Electrochem. Soc.

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Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide

Talipov

Ovsyuk

Remesnik

et al. 1997

Materials Science and Engineering: B

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Range distributions of ion-implanted fluorine in Hg1−xCdxTe, CdTe, and Pb1−xSnxTe

Xia

Tan

et al. 1990

Journal of Applied Physics

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Depth profiles of ion-implanted fluorine in Hg1−xCdxTe, CdTe, and Pb1−xSnxTe have been measured by use of the 19F(p,αγ)16O resonance nuclear reaction at 872.1 keV with width Γ=4.2 keV. In order to obtain the true range distribution of implanted fluorine from the experimental excitation yield curve, a convolution calculation method is presented, from which the range distribution parameters such as the average projected range RP, the projected range straggling ΔRP and the skewness of the projected range distribution SK were obtained. These experimental range parameters were compared with those obtained by a theoretical calculation and by use of the trim89 program, and shows that for all the materials studied here the experimental RP values agree with the theoretical and the trim values very well but the experimental range straggling ΔRP are larger than those obtained by the theoretical calculation and the trim89. This phenomenon may be attributed to the enhanced diffusion during the ion implantation.

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11B+ implantation and postimplant anneal studies in Hg1− Cd Te

Cited by 5 publications

References 4 publications

Growth and Characterization of Hg1 − x Cd x Te Photochemical Native Oxides

Growth and Characterization of Hg1 − x Cd x Te Photochemical Native Oxides

Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide

Range distributions of ion-implanted fluorine in Hg1−xCdxTe, CdTe, and Pb1−xSnxTe

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