12‐3: A 5.5 inch FFS‐LCD Driven by Soluble ‐metal‐oxide and Implementation in Production Line through BCE TFT Structure

Huang, Yen‐Yi; Chiang, Shin‐Chuan; Chen, Yu-Hsien; Wu, Der-Chun; Tseng, Kuo-Hsing; Lin, Yi-Hsien; Chang, Hsi-Ming; Pham, Duy Vu; Su, Kuo-Hui; Marinkovic, Marko; Weber, Dieter; Merkulov, Alexey; Anselmann, Ralf

doi:10.1002/sdtp.12499

Cited by 5 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In 2018, a 5.5 inch LCD display driven by solutionprocessed MO TFTs with a back-channel etched structure fabricated by slot-die coating technology in the Gen 4.5 TFT-LCD production line was demonstrated [154]. High uniformity of the electrical performance for the solution-processed MO TFTs on Gen 4.5 glass was achieved.…”

Section: Applicationsmentioning

confidence: 99%

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Chen¹,

Lan²

2019

Nanotechnology

View full text Add to dashboard Cite

Driven by the rapid development of novel active-matrix displays, thin-film transistors (TFTs) based on metal-oxide (MO) semiconductors have drawn great attention during recent years. N-type MO TFTs manufactured through vacuum-based processes have the advantages of higher mobility compared to the amorphous silicon TFTs, better uniformity and lower processing temperature compared to the polysilicon TFTs, and visible light transparency which is suitable for transparent electronic devices, etc. However, the fabrication cost is high owing to the expensive and complicated vacuum-based systems. In contrast, solution process has the advantages of low cost, high throughput, and easy chemical composition control. In the first part of this review, a brief introduction of solution-processed MO TFTs is given, and the main issues and challenges encountered in this field are discussed. The recent advances in channel layer engineering to obtain the state-of-the-art solution-processed MO TFTs are reviewed and summarized. Afterward, a detailed discussion of the direct patterning methods is presented, including the direct photopatterning and printing techniques. Next, the effect of gate dielectric materials and their interfaces on the performance of the resulting TFTs are surveyed. The last topic is the various applications of solution-processed MO TFTs, from novel displays to sensing, memory devices, etc. Finally, conclusions are drawn and future expectations for solution-processed MO TFTs and their applications are described.

show abstract

Section: Applicationsmentioning

confidence: 99%

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Chen¹,

Lan²

2019

Nanotechnology

View full text Add to dashboard Cite

show abstract

“…Metal oxide transistors have some advantages regarding environmental stability and large operating voltage compared with organic transistors and have thus become a promising class of TFT active layer materials [14,15]. And metal oxide TFTs have been reported to be used in display [16], nonvolatile memory [17], and photodetector fields [18].…”

Section: Introductionmentioning

confidence: 99%

Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors

et al. 2019

View full text Add to dashboard Cite

The preparation of thin-film transistors (TFTs) using ink-jet printing technology can reduce the complexity and material wastage of traditional TFT fabrication technologies. We prepared channel inks suitable for printing with different molar ratios of their constituent elements. Through the spin-coated and etching method, two different types of TFTs designated as depletion and enhancement mode were obtained simply by controlling the molar ratios of the InGaZnO channel elements. To overcome the problem of patterned films being prone to fracture during high-temperature annealing, a stepped annealing method is proposed to remove organic molecules from the channel layer and to improve the properties of the patterned films. The different interfaces between the insulation layers, channel layers, and drain/source electrodes were processed by argon plasma. This was done to improve the printing accuracy of the patterned InGaZnO channel layers, drain, and source electrodes, as well as to optimize the printing thickness of channel layers, reduce the defect density, and, ultimately, enhance the electrical performance of printed TFT devices.

show abstract

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

317

211

View full text Add to dashboard Cite

Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

show abstract

12‐3: A 5.5 inch FFS‐LCD Driven by Soluble ‐metal‐oxide and Implementation in Production Line through BCE TFT Structure

Cited by 5 publications

References 9 publications

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Stepped Annealed Inkjet-Printed InGaZnO Thin-Film Transistors

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Contact Info

Product

Resources

About