12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Hoshi, Shinichi; Itoh, Makoto; Toshiharu, Marui; Okita, Hideyuki; Yoshiaki, Morino; Tamai, Isao; Toda, Fumihiko; Seki, S.; Egawa, Takashi

doi:10.1143/apex.2.061001

Cited by 62 publications

(42 citation statements)

References 17 publications

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“…Although sapphire has been used widely, it exhibits poor thermal conductivity compared to SiC and Si. Recently, Si as a substrate has attracted much attention for the epitaxial growth of III-nitrides because of its low cost, larger size (diameters of up to 12 inch), and it permits the integration of III-nitride based devices with well-established Sielectronics [3][4][5][6].…”

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confidence: 99%

Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA‐MBE

Dharmarasu

Radhakrishnan

Sun

et al. 2011

Phys. Status Solidi C

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We report on the growth and characterization of AlN, GaN and AlGaN/GaN HEMT structure on 100‐mm Si (111) by PA‐MBE. AlN and GaN layers were grown as function of metal fluxes at a constant active nitrogen supply. Smooth surface morphology was achieved with metal rich growth conditions. Electrical properties of GaN were investigated as a function of Ga‐flux. For the first time, the presence of 2DEG is demonstrated in AlGaN/GaN HEMT structure on Si (111) substrate by PA‐MBE. A high electron mobility of 1100 cm2/V.sec is obtained with a sheet carrier density of 9 × 1012 cm‐2 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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mentioning

confidence: 99%

Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA‐MBE

Dharmarasu

Radhakrishnan

Sun

et al. 2011

Phys. Status Solidi C

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“…It has to be pointed out that these frequency performances have been achieved despite non-optimized high RF losses of about 2 dB/mm as can be seen in Figure 4b. The RF losses extracted from transmission lines reflect a parasitic conduction at the buffer/Si substrate interface due to the intermixing between the GaN buffer layer and the Si substrate [14].…”

Section: Rf Characteristicsmentioning

confidence: 99%

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

et al. 2016

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Abstract:We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a unique breakdown field close to 100 V/µm while offering high frequency performance. The low leakage current well below 1 µA/mm is achieved without using any gate dielectrics which typically degrade both the frequency performance and the device reliability. This achievement is mainly attributed to the optimization of material design and processing quality and paves the way for millimeter-wave devices operating at drain biases above 40 V, which would be only limited by the thermal dissipation.

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“…SiC offers the best solution for power handling with relatively high production cost [3]. GaN HEMTs on silicon substrate become an alternative approach because of its low cost and massproduction capability [4,5]. The use of field plates (FP) in GaN HEMTs enhances breakdown voltage and boosts power performance due to the mitigation of crowded electric field at the gate edge.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

Chang

Hsu

Huang

et al. 2012

2012 Asia Pacific Microwave Conference Proceedings

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In this work, AlGaN/GaN HEMTs on silicon with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 × 100 m 2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through highfrequency measurements, the device revealed a current gain cutoff frequency ( f T ) of 24 GHz, a maximum oscillation frequency ( f max ) of 49 GHz and an output power density of 5.0 W/mm at X-band.Index Terms -AlGaN/GaN, HEMTs, lithography, slant field plate, anodic oxide.

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12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

Cited by 62 publications

References 17 publications

Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA‐MBE

Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si(111) by PA‐MBE

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

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