12 Bit 1.5 GS/s L-Band ADC on 200 GHz SiGeC Technology

10 Bit and 12 Bit data conversion achievements at microwave frequencies on 200GHz SiGeC (Bipolar) and 120GHz 0.18µm BiCMOS technology

“…The transconductances (gm) of MOS and bipolar transistors are respectively given by Equations (1) and Equation (2)…”

“…Of course the CMOS section of available BiCMOS processes is generally very far from state of the art CMOS process (16nm), but a 130nm or a 90nm CMOS is more than enough for fast Data Converters design, together with a 160 GHz SiGeC HBT. This paper illustrates some major achievements in data conversion (ADCs and DACs) obtained thanks to 200GHz ft SiGeC (SiGe Carbon) fully Bipolar process [1], [2], [3], [4], and thanks to 120GHz fT SiGe BiCMOS 180nm process. In order to take advantage of both Bipolar and CMOS transistors, their performance with respect to transconductance, speed, matching, and noise are reviewed and compared in section VI.…”

A four-channel time-interleaved 30-GS/s 6-bit ADC in 0.18 μm SiGe BiCMOS technology

“…However, the production cost in the advanced silicon process is unbearable for the limited quantitive products. Compared with CMOS technology, SiGe BiCMOS technology has advantages of high speed, low 1/f noise, low mismatch and high reliability with low cost, which make it very suitable to built low volume high speed ADCs [3]. Additional, time-interleaving technique increases the conversion rate of a data converter by using a number of converters working in parallel for a simultaneous quantization of input samples.…”