120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellite

Nagasaka, Masafumi; Kojima, Masaaki; Nakazawa, Shozo; Sujikai, Hisashi; Tanaka, Shōji; Torii, Takuma; Utsumi, Hiromitsu; Shinjo, Shintaro; Shimozawa, Mitsuhiro

doi:10.23919/apmc.2018.8617414

Cited by 7 publications

(4 citation statements)

References 5 publications

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“…The SSPA mainly includes a diode linearizer (LNZ), GaN driver amplifier (DA), and GaN high power amplifier (HPA). The LNZ compensates for the AM/AM and AM/PM distortion of the whole PAs [16]. The DA has a saturation power of 60 W and has been reported in detail [15].…”

Section: Sspa Design and Hpa Prototypementioning

confidence: 97%

“…The output power of the HPA becomes higher when a device size characteristic such as the unit gate width (Wgu) becomes larger [15], [16]. In order to increase the output power, the whole transistor needs to be enlarged.…”

Section: Design Of Hpamentioning

confidence: 99%

“…A 120-W-class SSPA applying this technology could be a replacement for the 120-W-class TWTA in the current broadcasting satellite transponder [13]. So far, we have studied using 100-W-class SSPAs for a broadcasting satellite operating in the 12-GHz band (11.7 to 12.2 GHz) [14]- [16].…”

Section: Introductionmentioning

confidence: 99%

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120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellites

Nagasaka

Kojima

Torii

et al. 2019

IEICE Trans. Electron.

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Satellite broadcasting of 4K/8K ultra-high definition television (UHDTV) was launched in Japan in December 2018. Because this system uses the amplitude and phase shift keying (APSK) modulation scheme, there is a need to improve the non-linear characteristics of the satellite transponders. To meet this requirement, we have been developing a 120-W-class Ku-band solid state power amplifier (SSPA) as a replacement for the currently used traveling wave tube amplifier (TWTA). In this study, we developed a gallium-nitride (GaN) SSPA and linearizer (LNZ). The SSPA achieved an output power of 120 W while maintaining a power added efficiency (PAE) of 31%. We evaluated the transmission performance of 16APSK in this SSPA channel in comparison with that in the TWTA channel.

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Section: Sspa Design and Hpa Prototypementioning

confidence: 97%

Section: Design Of Hpamentioning

confidence: 99%

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120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellites

Nagasaka

Kojima

Torii

et al. 2019

IEICE Trans. Electron.

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“…Electronically scanned array radar systems are usually composed of hundreds or thousands of TR modules [1][2][3][4][5] . By adjusting the phases of each part of the TR modules, different directions of the radar beam in space can be accomplished to achieve the purpose of navigation and detection.…”

Section: Introductionmentioning

confidence: 99%

Design of High-isolation Miniaturized Multi-channel Ku-band Driving Module

Bai

2022

J. Phys.: Conf. Ser.

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The driving module is the key component of the electronic scanning array radar system, which controls the radio frequency signal of the whole radar. It must have the characteristics of high performance, low cost, lightweight, miniaturization and easy to use. To meet this requirement, a miniaturized multi-channel Ku-band driving module design scheme is proposed in this paper. The module integrates four-channel T/R amplifier circuits, two-channel calibration switch circuits, and a RF power division network, with a total of 19 radio frequency interfaces, which can significantly reduce the number of active amplifiers in the radar system. The module adopts a positive and negative double-sided open-cavity design, combines with vertical interconnection technology to achieve more than 80dBc channel isolation of calibration switch circuit, and has good gain flatness and inter-channel phase consistency. The overall size of the module is 107mm*84mm*12mm, the weight is only 202g, the transmit power of the odd channel is greater than 26.7dBm, and the transmit power of the even channel is greater than 28.4dBm. This module can be widely used in car navigation, radar detection, and other fields due to its characteristics of small size, rich function, and easy integration.

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Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

Chang

Panda

Weng

et al. 2023

Semicond. Sci. Technol.

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Ti/TiN/Cu is established to be an enabling alternative to the better-known Au-based ohmic contact metals such as Ti/Al/Ni/Au. The Cu-based option delivers lower contact resistance and smoother surface morphology and is proven to be compatible with AlGaN/GaN HEMTs device processing. The TiN layer serves as an effective Cu-diffusion barrier as no detectable Cu-diffusion was observed when subjected to thermal treatment up to 600 ℃. There is a tendency of N-diffusion across the Ti/GaN interface near which N-deficiency in the GaN epitaxial layer and formation of a nano-sheath of TiN was found. This ultrathin layer of TiN works to further improve the ohmic performance of the electric contact, as reflected in lowered contact resistivity ρC. It is possible to manufacture the TiN thin films with low sheet resistance at a high deposition rate by adjusting the ratios between argon and nitrogen gas flows during sputtering deposition. Contact resistivity ρC, tested for the AlGaN/GaN HEMT devices fabricated on Si substrate according to the TLM standard were found to be as low as 3.65×10-6 Ω-cm2 (RC = 0.54 Ω-mm). The outcomes benchmark favourably against many reported metal-stacking structures for ohmic contacts. The robustness of surface morphology and interface sharpness against thermal treatments make the established ohmic stack structures suitable for scalable device fabrications.

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120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellite

Cited by 7 publications

References 5 publications

120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellites

120-W Ku-Band GaN SSPA with Diode Linearizer for Future Broadcasting Satellites

Design of High-isolation Miniaturized Multi-channel Ku-band Driving Module

Effect of TiN barrier layer in Cu-based ohmic contact of AlGaN/GaN high electron mobility transistor

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