1200 V GaN vertical fin power field-effect transistors

Zhang, Y.; Sun, Min; Piedra, Daniel; Hu, Jie; Liu, Z.; Lin, Yuxuan; Gao, Xiang; Shepard, Ken; Palacios, Tomás

doi:10.1109/iedm.2017.8268357

Cited by 104 publications

(90 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In narrow fin channels, all electrons can be depleted at zero gate bias due to the work function difference between the gate metal and GaN, enabling normally-off operation. A BV of 1.2 kV and a specific on-resistance (Ron,sp) of 1 mΩ•cm 2 have been demonstrated [8] on small devices with tens of fins. 10 A transistors have also been fabricated but their BV was limited to 800 V [8].…”

Section: Introductionmentioning

confidence: 99%

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Zhang

Sun

Perozek

et al. 2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

This work presents the first experimental study on capacitances, charges and power-switching figure-of-merits (FOMs) for a large-area vertical GaN power transistor. A 1.2 kV, 5 A GaN vertical power FinFET was demonstrated in a chip area of 0.45 mm 2 , with a specific on-resistance of 2.1 mΩ•cm 2 and a threshold voltage of 1.3 V. Device junction capacitances were characterized and their main components were identified. This was used to calculate the switching charges and practical switching frequencies. Device FOMs were then derived that take into account the trade-offs between conduction and switching power losses. Our GaN vertical FinFETs exhibit high frequency (~MHz) switching capabilities and superior switching FOMs when compared to commercial 0.9-1.2 kV Si and SiC power transistors. This work shows the great potential of GaN vertical FinFETs for next-generation medium-voltage power electronics.

show abstract

Section: Introductionmentioning

confidence: 99%

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Zhang

Sun

Perozek

et al. 2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…The peak electric field is located in the bulk of the semiconductor for most vertical designs and a more uniform electric field distribution is achieved [2], reducing the need for complex field-plate structures [3]. Several device concepts are currently investigated, such as vertical trench metal oxide semiconductor field effect transistor (FET) [4,5], finFET [6,7] or vertical junction FET [8][9][10]. Another promising design is the CAVET [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

et al. 2019

View full text Add to dashboard Cite

In this paper, we demonstrate the fabrication of current aperture vertical electron transistors (CAVET) realized with two different epitaxial growth methods. Templates with a p-GaN current blocking layer (CBL) were deposited by metal organic chemical vapor deposition (MOCVD). Channel and barrier layers were then regrown by either molecular beam epitaxy (MBE) or MOCVD. Scanning electron microscope (SEM) images and atomic force microscope (AFM) height profiles are used to identify the different regrowth mechanisms. We show that an AlN interlayer below the channel layer was able to reduce Mg diffusion during the high temperature MOCVD regrowth process. For the low-temperature MBE regrowth, Mg diffusion was successfully suppressed. CAVET were realized on the various samples. The devices suffer from high leakage currents, thus further regrowth optimization is needed.

show abstract

“…While the lateral AlGaN/GaN high electron mobility transistors (HEMTs) continue to penetrate the 600 V -class medium-power electronics market, vertical GaN devices are developed for high-voltage high-current applications. In the past few years, numerous GaN vertical power transistors have been reported on freestanding GaN substrates [1][2][3][4][5][6][7][8][9]. However, the high cost and small available size of bulk GaN substrates could limit the widespread commercial adoption of vertical power devices on bulk GaN.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we demonstrate the first vertical GaN MOSFET with monolithically-integrated freewheeling SBD on 6-inch silicon substrates. The integrated MOSFET-SBD exhibited enhancement-mode (E-mode) operation with a threshold voltage (V TH ) of 3.9 V, an on/off ratio of over 10 8 Fig. 1 (c).…”

Section: Introductionmentioning

confidence: 99%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

View full text Add to dashboard Cite

1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

show abstract

1200 V GaN vertical fin power field-effect transistors

Cited by 104 publications

References 14 publications

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Contact Info

Product

Resources

About