12W/mm with 0.15&amp;#x00B5;m InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications

Piotrowicz, S.; Jardel, Olivier; Chartier, E.; Aubry, R.; Baczkowski, Leny; Casbon, Michael A.; Dua, C.; Escotte, L.; Gamarra, Piero; Jacquet, J.; Michel, N.; Nsele, Séraphin Dieudonné; Oualli, M.; Patard, O.; Potier, Clément; Poisson, M. A.; Delage, S.

doi:10.1109/mwsym.2014.6848347

Cited by 14 publications

(8 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Very promising performances in terms of output power density have been measured at 18 GHz (12 W/mm) and 30 GHz (2.5 W/mm). 2 The minimum noise figure and associated gain at 20 GHz are 1.25 dB and 11 dB, 2 respectively, which are very close to the best results measured on similar transistors with smallest gate length. 8 Figure 1 represents the variations of the gate current versus the applied gate voltage measured at 300 K when the drain is open-circuited.…”

supporting

confidence: 82%

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Nsele

Escotte

Tartarin

et al. 2014

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

We present low-frequency gate noise characteristics of InAlN/AlN/GaN heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The electric field in the InAlN barrier is determined from C-V measurements and is used for gate leakage current modeling. The latter is dominated by Poole-Frenkel emission at low reverse bias and Fowler-Nordheim tunneling at high electric field. Several useful physical parameters are extracted from a gate leakage model including polarizations-induced field. The gate noise fluctuations are dominated by trapping-detrapping processes including discrete traps and two continuums of traps with distributed time constants. Burst noise with several levels and time constant values is also observed in these structures. Low-frequency noise measurements confirm the presence of field-assisted emission from trap states. The 1/f noise model of McWorther is used to explain the 1/f-like noise behavior in a restricted frequency range.

show abstract

supporting

confidence: 82%

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Nsele

Escotte

Tartarin

et al. 2014

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…The process of InAlN/GaN HEMT and MOS-HEMT devices are developed on SiC substrate by MOCVD technique (3 inches wafer); devices are optimized considering the transition frequency F t and maximum oscillation frequency F max , the output power and the low noise performances for Kaband applications. More details on the technology can be found in [1]. F t =40 GHz and F max =110 GHz have been achieved for the MOS-HEMT used in this study.…”

Section: Inaln/gan Mos-hemt Technologymentioning

confidence: 99%

Ka-band low noise amplifiers based on InAlN/GaN technologies

Nsele

Robin

Tartarin

et al. 2015

2015 International Conference on Noise and Fluctuations (ICNF)

Self Cite

View full text Add to dashboard Cite

Low noise amplifiers in receivers are usually addressed by III-V (narrow bandgap) technologies: but when the receivers are subject to EM exposure or jamming, the need for protection devices before the active low noise amplifier (LNA) degrades the overall noise figure, and decreases the effective radio link budget. This vulnerability of the LNA can be overcome thanks to robust designs or robust technologies. Nitride technologies are investigated for power modules in transmitters and stand as promising solutions to avoid the use of limiters for robust low noise circuits in receivers. This work focuses on HF noise in InAlN/GaN HEMT devices and circuits for Ka-band SATCOM applications. Different versions of LNA have been designed at 30 GHz, in hybrid and MMIC technologies. For these designs, 1-stage and 3-stages LNAs have been realized; 1-stage amplifiers are designed to assess and study the stress tolerance under RF signal, whereas 3-stages LNAs are designed as demonstrators of operational module for receiver's blocks (Gain>20dB featuring the lowest noise figure achievable).

show abstract

“…Multiple-input multiple-output (MIMO) radar, as an emerging system radar, has been drawn much attention in the field of radar, due to its higher advantages than traditional radars in tracking, target localization, parameter estimation and target detection [1,2,3,4,5]. With the continuous breakthrough of key semiconductor technologies, GaN devices with wider band gap, higher electron saturation velocity and higher thermal conductivity are extensively used in the power amplifier (PA) applications of fifth-generation millimeter-wave communication, radar, automotive and other fields [6,7,8]. For low noise applications, GaN-based material are generally considered inferior to gallium arsenide (GaAs) technology on account of the relatively low electron mobility resulting in poorer NF [9,10].…”

Section: Introductionmentioning

confidence: 99%

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Yang

Zhang

Liu

et al. 2022

IEICE Electron. Express

View full text Add to dashboard Cite

A K-band low noise amplifier (LNA) with low and flat noise figure (NF) is proposed in this letter. The LNA is designed as the first stage of an RF receiver in a frequency modulated continuous wave (FMCW) multiple-in multiple-out (MIMO) radar system for marine vessel monitoring and airspace unmanned aerial vehicle (UAV) monitoring. The multi-antenna structure at the receiving end of the MIMO radar implies higher sensitivity. The LNA is fabricated using a 100-nm GaN high electron mobility transistor (HEMT) process with a chip area of 2.2 mm 2 . By analyzing the noise equivalent circuit model of a GaN-on-Si HEMT and optimizing the matching network, the proposed LNA achieves a measured average gain of 17.2 dB, an NF of 2.0-2.3 dB over the frequency range from 18 to 22.5 GHz. With a power sweep measurement, this LNA achieves an P1dB of 10.5 dBm and an OIP3 of 19 dBm at 20 GHz. The DC consumption is 220 mW under 5 V power supply.

show abstract

12W/mm with 0.15µm InAlN/GaN HEMTs on SiC technology for K and Ka-Bands applications

Cited by 14 publications

References 4 publications

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures

Ka-band low noise amplifiers based on InAlN/GaN technologies

A K-band MMIC low noise amplifier in GaN-on-Si 100-nm technology for MIMO radar receivers

Contact Info

Product

Resources

About