13 GHz FET Negative Resistance 0.5 W Amplifier

Comments on “low‐noise one‐port microwave transistor amplifier”

“…The authors of [1] failed to acknowledge the earlier work in [2][3][4][5][6][7], and the referees failed to notice this omission. [1] argue that the authors of [2] have failed to acknowledge significant earlier work in the same field.…”

“…Regarding this, we appreciate the authors of [1] for providing a list of references related to this field. We admit that some of the references were unknown to us before sending the manuscript, but it is worthwhile to mention that others [3] have been cited by us in a recent work [4].…”

“…The concept of using a GaAs MESFET in a reflection mode amplifier to achieve high gain at high frequency was reported as long ago as 1979 [2], and a power amplifier using the same idea was described in the same year [3]. A design method for lownoise, negative-resistance, reflection-mode, transistor amplifiers, along with a practical example operating in X-band, was described in 1991 [4].…”

“…Like the other reflection amplifiers, the topology of the proposed OPTA also uses a circulator, matching network, a nonlinear element (transistor), and an appropriate DC source. As distinct from a traditional one-port amplifier [3], OPTA has essential methodological differences as follows: a) A used HJ FET transistor operates at the beginning region of the I-V curves to receive the maximum nonlinearity of the channel conductance. Operating in this mode essentially reduces the amplifier consumption.…”