13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Okamoto, Daisuke; Tanaka, Yasunori; Mizushima, Tomonori; Yoshikawa, Miho; Fujisawa, Hiroyuki; Takenaka, Kensuke; Harada, Shinsuke; Ogata, Shūji; Hayashi, Toshihiko; Izumi, Teruo; Hemmi, Tetsuro; Tanaka, Atsushi; Nakayama, Koji; Asano, Kōichi; Matsumoto, Kazushi; Ohse, Naoyuki; Rais‐Zadeh, Mina; Ota, Chiharu; Takao, Kazuto; Mizukami, Masaaki; Kato, Tomohisa; Takei, Masahiro; Yonezawa, Yoshiyuki; Fukuda, Kenji; Okumura, Hajime

doi:10.4028/www.scientific.net/msf.778-780.855

Cited by 9 publications

(3 citation statements)

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“…Figure 1 shows the forward characteristics of an SiC-PiN diode. R diff,on = 12 mΩ cm 2 , and there is forward current higher than 20 A at the voltage of 5 V. The blocking voltage of the fabricated SiC-PiN diode was 13.7 kV [3]. Figure 2 shows the temperature dependence of the reverse recovery characteristics measured using the package technology that will be described in section IV.…”

Section: Sic Pin Diodementioning

confidence: 98%

Ultrahigh voltage SiC bipolar devices

Fukuda

Okamoto

Harada

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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Ultrahigh voltage SiC bipolar devices more than 13 kV were developed, and their package technology was investigated. As a result, we have succeeded in creating a 13kV level PiN diode without forward voltage degradation by using 4° off substrates and a 15kV p-channel IGBT with a low differential specific on-resistance (R diff,on ) at high temperature. Moreover, the results reveal that the nano-tech resin, improved resin and Si 3 N 4 DBC substrate are the best materials for package at high temperature and ultrahigh voltage.

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Section: Sic Pin Diodementioning

confidence: 98%

Ultrahigh voltage SiC bipolar devices

Fukuda

Okamoto

Harada

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

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“…A double pulse test was conducted to measure reverse recovery characteristics of both the fabricated SiC JBS diode and a previously reported [7] 13-kV SiC PiN diode. Figure 7 shows an Table 1.…”

Section: Reverse Recovery Characteristicsmentioning

confidence: 99%

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension

Kitai

Hozumi

Shiomi

et al. 2017

MSF

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The static and dynamic characteristics of 13-kV class 4H-SiC junction barrier Schottky (JBS) diodes with a three-zone junction termination extension (JTE) are presented. Using an anisotropy breakdown model, technology computer-aided design simulation of devices with a three-zone JTE agrees well with the obtained experimental results, correctly predicting a sharp drop in blocking voltage at high JTE acceptor concentrations. The forward voltage of the JBS diode at 75°C and a forward current of 500 mA is reduced to approximately one-ninth by that of 13 series-connected 1000-V Si PiN diodes. This suggests that conduction losses of traditional high-voltage circuits which conventionally use series-connected devices can be drastically reduced by replacing the series-connected devices with a single 13-kV class SiC JBS diode. Moreover, the reverse recovery current waveform of the 13-kV class SiC JBS diode shows that these diodes have lower reverse recovery losses than a 13-kV SiC PiN diode.

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“…Epitaxial layers grown by chemical vapor deposition (CVD) on commercial 4H-SiC substrates were used as starting material for implanted p+-n−-n+ merged pn-Schottky (MPS) diodes, together with additional test structures. [3] The epitaxial structure view and thickness map of a 4H-SiC epitaxial wafer of 1200V 40A SBD are shown in Fig. 1.…”

Section: Design and Experimentalmentioning

confidence: 99%