13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Wang, Ting; Liu, Huiyun; Lee, Andrew; Pozzi, F.; Seeds, A.J.

doi:10.1364/oe.19.011381

Cited by 248 publications

(115 citation statements)

References 17 publications

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“…From the plan-view image of Fig. 1(a), the morphology of the unburied QD can easily be defined at the atomic scale, analyzing angles of reconstructed facets with the nominal (001) plan, and QD edge direction angles with the [1][2][3][4][5][6][7][8][9][10] and [110] directions that is fixed by the dimer orientation on the (001) nominal surface [the wetting layer (WL), here]. Resulting geometry and crystallographic orientations are illustrated in Fig.…”

Section: Qd Geometry and Compositionmentioning

confidence: 99%

“…Especially, the hybrid integration of III-V structures by bonding [2] or epitaxial lift-off and transfer-printing [3] are considered as very potent short-term solutions to address the medium volume applications of high-bandwidth data transmissions in servers and data centers. On a longer term, the monolithic integration of III-V semiconductors lasers on silicon is expected to match more surely with the very large scale integration requirements [4][5][6]. Unfortunately, crystalline defects generated during the III-V/Si heteroepitaxy are known to limit the laser device performances; a thick buffer layer is usually needed to avoid the emergence of these structural defects, which limits the optical coupling solutions with the silicon chip.…”

Section: Introductionmentioning

confidence: 99%

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Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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Section: Qd Geometry and Compositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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“…N recent years silicon photonics as an integration platform has been a focus of optoelectronics research because of promise of low-cost, high-volume, manufacturing in silicon allowing for economical optical interconnects in applications [1]- [2]. Optical interconnects to and on silicon-on-insulator (SOI) substrates are now being considered as a promising candidate to overcome the limitations of electrical interconnects [3].…”

Section: Introductionmentioning

confidence: 99%

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Zhang

et al. 2016

IEEE Photon. Technol. Lett.

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Abstract-An InGaAsP-Si hybrid single-mode laser based on etched slots in silicon waveguides was demonstrated operating at 1543 nm. The InGaAsP gain structure was bonded onto a patterned silicon-on-insulator (SOI) wafer by selective area metal bonding (SAMB) method. The mode-selection mechanism based on a slotted silicon waveguide was applied in which the parameters were designed using the simulation tool "Cavity Modeling Framework" (CAMFR). The III-V lasers employed buried ridge stripe (BRS) structure. The whole fabrication process only needs standard photolithography and inductively coupled plasma (ICP) etching technology, which reduces cost for ease in technology transfer. At room temperature, a single mode of 1543 nm wavelength at a threshold current of 21 mA with a maximum output power of 1.9 mW in continuous-wave regime was obtained. The side mode suppression ratio (SMSR) was larger than 35 dB. The simplicity and flexibility of the fabrication process and a low cost make the slotted hybrid laser a promising light source.Index Terms-Hybrid silicon laser, slots, CAMFR, single-mode laser, buried ridge stripe (BRS) structure, selective area metal bonding (SAMB) method

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“…Many approaches have been investigated; including rare earth doped Si, stimulated Raman scattering, nanostructure Si and heterogeneous/monolithic integration of III-V and Si [2][3][4][5][6]. Several successful demonstrations of room temperature lasing have been reported including Si Raman lasers, hybrid Si lasers and III-V and Ge lasers grown on Si [3,4]. However, each of these methods still requires significant development in order to provide a manufacturable solution.…”

Section: Introductionmentioning

confidence: 99%

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

et al. 2016

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Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.

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13-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

Cited by 248 publications

References 17 publications

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

A Hybrid Single-Mode Laser Based on Slotted Silicon Waveguides

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

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