130-320-GHz CMOS Harmonic Down-Converters Around and Above the Cutoff Frequency

Khamaisi, Bassam; Socher, Eran

doi:10.1109/tmtt.2015.2431671

Cited by 26 publications

(9 citation statements)

References 19 publications

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“…Currently CMOS technology is the most feasible for large scale systems and has the lowest cost. As was shown by Khamaisi et al, 36 for 65 nm CMOS the conversion loss is in the range of 23−25.5 dB for LO frequencies from 220 to 300 GHz, comparable to our graphene mixer for intrinsic conversion loss. Bandwidths are 20−30 GHz, smaller than graphene.…”

supporting

confidence: 87%

“…The TE detection relies on absorption of RF power in a device with very low parasitic reactance. This lends its operation to translation to much higher frequencies, such as the sub-THz semiconductor devices as discussed above, [36][37][38][39] as well as further up to several THz, related to and improving upon the device we developed before. 24 The conversion gain can be improved by applying a gate voltage, 24 lowering the device impedance and optimizing the device asymmetry.…”

Section: Manuscript Textmentioning

confidence: 89%

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Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing

et al. 2018

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Graphene, a single atomic layer of covalently bonded carbon atoms, has been investigated intensively for optoelectronics and represents a promising candidate for high-speed electronics. Here, we present a microwave mixer constructed as an asymmetrically contacted two-terminal graphene device based on the thermoelectric effect. We report a 50 GHz (minimum) mixer bandwidth as well as 130 V/W (163 mA/W) extrinsic direct-detection responsivity. Anomalous second-harmonic generation due to self-mixing in our graphene detector is also observed. Careful investigation of the responsivity from four different approaches gives consistent results, confirming the exceptional performance of our zero-bias device operating at room temperature. The 50 GHz bandwidth indicates an extremely fast response time and our experimental results represent an encouraging advance toward practical graphene microwave devices with anticipated future applications extended through millimeter wave and terahertz frequencies.

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supporting

confidence: 87%

Section: Manuscript Textmentioning

confidence: 89%

Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing

et al. 2018

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“…The measured CL is 34 ± 3 dB at 190-210 GHz with a minimum of 31.5 dB at 190 GHz. Albeit the performance of our proof-of-concept G-FET mixer on Si is inferior to CMOS [18], by transferring the process graphene has clear advantages for flexible electronics [19].…”

Section: Introductionmentioning

confidence: 97%

A 200 GHz CVD graphene FET based resistive subharmonic mixer

Zhang

Andersson

Stake

2016

2016 IEEE MTT-S International Microwave Symposium (IMS)

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We report on the design and characterization of a 200 GHz resistive subharmonic mixer based on a single, multichannel CVD graphene field effect transistor (G-FET). The device has gate length 0.5 µm and width 2x40 µm. The integrated mixer circuit is implemented in coplanar waveguide (CPW) technology and realized on a 100 µm thick high resistive silicon substrate. The measured mixer conversion loss (CL) is 34 ± 3 dB across 190-210 GHz band with 10 dBm local oscillator (LO) pumping power and the overall minimum CL gives 31.5 dB at 190 GHz.

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“…The measurements yield a record CL for graphene-based mixers of 29 ± 2 dB in the 185-210-GHz band, which is 5 dB less than [23]. The performance of our G-FET mixer on silicon is inferior to both GaAs HEMT [24] and CMOS [25]. Nevertheless, if the process on Si is adapted to flexible substrates [26], then the results in this 0018-9480 © 2016 IEEE.…”

Section: Introductionmentioning

confidence: 82%

A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

Andersson

Zhang

Stake

2017

IEEE Trans. Microwave Theory Techn.

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A 200-GHz integrated resistive subharmonic mixer based on a single chemical vapor deposition graphene field-effect transistor (G-FET) is demonstrated experimentally. This device has a gate length of 0.5 μm and a gate width of 2 × 40 μm. The G-FET channel is patterned into an array of bow-tie-shaped nanoconstrictions, resulting in the device impedance levels of ∼50 and the ON-OFF ratios of ≥4. The integrated mixer circuit is implemented in coplanar waveguide technology and realized on a 100-μm-thick highly resistive silicon substrate. The mixer conversion loss is measured to be 29 ± 2 dB across the 185-210-GHz band with 12.5-11.5 dBm of local oscillator (LO) pump power and >15-dB LO-RF isolation. The estimated 3-dB IF bandwidth is 15 GHz.

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130-320-GHz CMOS Harmonic Down-Converters Around and Above the Cutoff Frequency

Cited by 26 publications

References 19 publications

Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing

Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing

A 200 GHz CVD graphene FET based resistive subharmonic mixer

A 185–215-GHz Subharmonic Resistive Graphene FET Integrated Mixer on Silicon

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