The structure and formation mechanisms of 3-aminopropyltrimethoxysilane (3-APTS) films deposited on wet-chemically grown silicon dioxide over n-Si(100) wafer have been examined systematically using x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The asymmetric N 1s XPS spectrum for the anchored 3-APTS was fitted for -NH 2 (399.6 ± 0.3 eV) and -NH 3 + (401.1 ± 0.3 eV).
Rougher surfaces are obtained by deposition from toluene solutions than from the gaseous phase. Over the 3-APTS layer was deposited the [FeTIM(CH 3 CN) 2 ]2+ complex, where TIM is 2,3,9,10-tetramethyl-1,4,8,11-tetraazacyclotetradeca-1,3,8,10-tetraene. The adsorption occurs by acetonitrile replacement for the-NH 2 -grafted group with the equatorial plane parallel to the organomodified surface. Once FeTIM can bind a CO, NO or N-heterocycle, a built-on Si wafer sensor device could be envisaged for these molecules.