(14.82 %, 12.16 %, 26.55 %, or 23.69 %)-Limiting Highest Efficiencies, obtained respectively in \\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n}^+(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}^+)-\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{p}(\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\mathbf{n})\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\ Crystalline (\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\\

Abstract

In the n + (p + ) − p(n) crystalline ( X ≡Ge, GaSb, CdTe or CdSe)-junction solar cells at 300K, due to the effects of impurity size, temperature, heavy doping, and photovoltaic conversion, we show that, with an increasing donor (acceptor)-radius r d a , both the relative dielectric constant and photovoltaic conversion factor decrease, and the intrinsic band gap (IBG) increases, according to the increase in photovoltaic efficiency, as observed in Tables 1-5, being in good accordance with an important result obtained by Shockley and Queisser [10], stating that for an increasing IBG the photovoltaic efficiency increases.Further, for highest values of r d a , the limiting highest efficiencies are found to be given in Tables 2.2, 3.2, 4.2, and 5.2, as: 14.82 %, 12.16 %, 26.55 %, and 23.69 %,), obtained in such n + (p + ) − p(n) crystalline (Ge, GaSb, CdTe, or CdSe)-junction solar cells at the open circuit voltage =0.33 V, 0.355 V, 0.82 V, and 0.89 V, respectively, and at T=300 K.Furthermore, from the well-known Carnot-efficiency theorem, as given in Eq. ( 46), being obtained from the second principle of the thermodynamics, and from the above results of limiting highest efficiencies, the corresponding highest hot reservoir temperatures, T H =352.2 K, 341.5 K, 408.4 K, and 393.1 K, respectively. Thus, as noted above, η max. and T H both increase with an increasing IBG, for each (X≡Ge, GaSb, CdTe, or CdSe)-crystal at T=300 K≡ T C .

34.375 % (33.72 %) -Maximal Efficiencies investigated in New n+(p+)-p(n) CdSe1-xSx, CdSe1-xTex - Crystalline Alloy Junction Solar Cells at 300 K, According to Highest Hot Reservoir Temperatures

“…First of all, in two n + (p + ) − p(n) X(x)(≡ CdSe 1−x S x , CdSe 1−x Te x )-crystalline alloy junction solar cells, we present the effects of x-concentration on such X(x)-alloy, donor (acceptor) [d(a)]-size, temperature T and heavy doping, affecting strongly the energy-band-structure parameters [1,2], in order to investigate the total minority-carrier saturation current densities, as those given in the following.…”

“…In the n + (p + ) − p(n) single n + (p + ) − p(n) X(x)-alloy junction at T=0 K, the intrinsic energy-bandstructure parameters such as: the effective average number of equivalent conduction (valence)-band edges g c(v) (x), the unperturbed relative effective electron (hole) mass in conduction (valence) bands m c(v) (x)/m o , m o being the electron rest mass, the unperturbed relative dielectric constant ε o (x), expressed as functions of x, are given in the following. (ii)-The unperturbed relative dielectric constant of the intrinsic of the single crystalline X-alloy is found to be defined by [1,2]:…”

“…Therefore, we can define the effective donor (acceptor)-ionization energy at r d(a) = r do(ao) = r Se(Cd) = 0.114 nm (0.148 nm), in absolute values, as [1,2]:…”

“…In two new single n + (p + ) − p(n) X(x)-alloy junction solar cells at 300 K, [X(x)≡ CdSe 1−x S x , CdSe 1−x Te x ], 0 ≤ x ≤ 1, by basing on the same physical model-and-treatment method, as used in our recent works [1,2], and also other works [3][4][5][6][7][8][9][10][11], some important results, obtained in the present work, are reported in the following.…”

“…

In two new single n + (p + ) − p(n) X(x)-alloy junction solar cells at 300 K, [X(x)≡ CdSe 1−x S x , CdSe 1−x Te x ], 0 ≤ x ≤ 1, by basing on the same physical model-and-treatment method, as used in our recent works [1,2], and also other works [3][4][5][6], some important results, obtained in the present work, are reported in the following.As noted in Tables 2.1, 3.1, 4.1 and 5.1, the dark carrier-minority saturation current density 𝐽𝐽 𝑜𝑜𝑜𝑜(𝑜𝑜𝑜𝑜𝑜𝑜) decreases slightly with increasing 𝑟𝑟 𝑑𝑑(𝑎𝑎) -radius for given x, and decreases strongly with increasing x, for given 𝑟𝑟 𝑑𝑑(𝑎𝑎) -radius. Further, as discussed in Eq.

…”