140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

Li, Oupeng; Zhang, Yong; Zhang, Tiedi; Wang, Lei; Xu, Ruimin; Sun, Yipeng; Cheng, Wei; Wang, Yuan; Niu, Bin

doi:10.1587/elex.14.20170191

Cited by 4 publications

(2 citation statements)

References 16 publications

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“…The process provides three wiring metal layers and compact interconnect vias between them. Metal-Insulator-Metal (MIM) capacitors with 0.26 fF/µm 2 capacitance density and 25 Ω/square TaN TFR are also available [13,14].…”

Section: Inp Dhbt Technologymentioning

confidence: 99%

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

Yanfei

et al. 2021

Electronics

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This paper presents a broadband amplifier MMIC based on 0.5 µm InP double-heterojunction bipolar transistor (DHBT) technology. The proposed common-emitter amplifier contains five stages, and bias circuits are used in the matching network to obtain stable high gain in a broadband range. The measurement results demonstrate a peak gain of 19.5 dB at 146 GHz and a 3 dB bandwidth of 56–161 GHz (relative bandwidth of 96.8%). The saturation output power achieves 5.9 and 6.5 dBm at 94 and 140 GHz, respectively. The 1 dB compression output power is −4.7 dBm with an input power of −23 dBm at 94 GHz. The proposed amplifier has a compact chip size of 1.2 × 0.7 mm2, including DC and RF pads.

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Section: Inp Dhbt Technologymentioning

confidence: 99%

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

Yanfei

et al. 2021

Electronics

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View full text Add to dashboard Cite

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“…The power amplifiers in this paper utilize a 0.5-µm InP DHBT process from Nanjing Electronic Devices Institute (NEDI) [12,13]. The epitaxial layer of the DHBT was grown on 3-inch semi-insulating InP substrate using molecular-beam epitaxy (MBE).…”

Section: Device Process and Characterizationmentioning

confidence: 99%

A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

Xiao

Zhang

et al. 2017

IEICE Electron. Express

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In this paper, a D-band power amplifier (PA) based on 0.5-µm InP DHBT is presented. Wilkinson combiners with broadband steppedimpedance matching are used, and the eight-way PA is designed for wideband power performance. As input power is fixed at 3 dBm, the PA exhibits a saturated output power of 16.8 dBm and 7.9% PAE at 150 GHz with >45-GHz 3-dB power bandwidth from 125 GHz to 170 GHz. Meanwhile the 1-dB gain compression output power is 15.9 dBm at 150 GHz. The >45-GHz 3-dB power bandwidth means a great flatness of power gain which is outstanding in reported D-band PAs to our best knowledge.

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A study on gain boosting techniques of cascode amplifier at near-f frequencies based on gain plane approach

Xie

Wang

2021

Microelectronics Journal

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140 GHz power amplifier based on 0.5 µm composite collector InP DHBT

Cited by 4 publications

References 16 publications

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

A 56–161 GHz Common-Emitter Amplifier with 16.5 dB Gain Based on InP DHBT Process

A 125–170 GHz wideband high-power amplifier using 0.5-µm InP DHBT

A study on gain boosting techniques of cascode amplifier at near-f frequencies based on gain plane approach

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