1480nm InGaAsP LOC broad-area laser diodes

Abstract

1480nm InGaAsP large optical cavity broad-area laser diodes have been developed and optimized for pulsed and CW operation. The optical output powers at 20 degrees C are 18 W and 3.7 W, respectively. In accelerated ageing tests no noticeable degradation was observed

1550 nm broad area large optical cavity laser with 4.9 W CW output power

“…To the best of our knowledge, per today the maximum CW output power of commercially available lasers is limited to 4.2 W [3]. In this work we present 4.9 W InGaAsP multi quantum-well structure (MQW) broad area lasers using a low loss large optical cavity (LOC) design [4,5]. By optimizing the waveguide structure and in particular the p-and n-doping levels ultra low optical losses could be achieved allowing for increased high optical output power.…”