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C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

“…A least squares fit of equation (1) to the data in Fig.4 has also shown a linear dependence of the etch rate on V b 1/2 for both unimplanted and implanted samples. The reactive ion etching of diamond in CF 4 /O 2 plasmas has previously been identified as a process of ion-enhanced chemical etching [3]. 4 has indicated the same basic process of etching.…”

“…A gas mixture of CF 4 (28 sccm)/ O 2 (2 sccm) was selected because of the smooth surface and moderate etch rate produced by this plasma during the etching of diamond films [3]. The polycrystalline films were ~15 µm in thickness as supplied by Sumitomo, Japan.…”

Research of reactive ion and plasma-chemical etching effect on diamond coating surface morphology

“…To vary the morphology of the surface, we used the methods of ion beam etching in the atmosphere of argon and in hydrogen plasma. The technology of ion etching is as follows: argon was injected into the chamber under a pressure of about 10 -3 Torr and the charge was ignited [9]. The ions are "extended" under the accelerating voltage of 3.5 keV and directed onto the sample.…”

Nanostructuring of diamond films using self-assembled nanoparticles

“…In spite of reports about successful etching with bias enhanced microwave or hot fila- * E-mail: babcenko@fzu.cz ment process [6,7], radiofrequency (RF) plasma seems to be the most popular technique used for etching of diamond films. It has been already reported about a successful etching of diamond in RF-activated plasma systems using various chemistries [8,9] and applying different masking materials. Aluminum is often used as masking material, but also another metals, polymers, oxides or nitrides [9] and even nanodiamond powder [5], have been investigated referring to their applicability for diamond structuring.…”

“…Different gases and/or their mixtures that have been used as source of ions are mostly O 2 Ar, CF 4 , CHF 3 , SF 6 , and to a lesser extent SiCl 4 , Cl 2 . In addition, several studies [5][6][7][8][9] present also interesting relations like dependence of the etch rate on the applied power and/or on the gas mixture, the influence of surface morphology and/or crystallogra-phy on the etch rate, etc. Ando et al have showed that a quite high etching ratio with a good result in smoothing of etched surface at high selectivity can be achieved in CF 4 /O 2 based gas mixture [10].…”