15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm<sup>2</sup> Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

Huang, Yi-Cheng; Liu, Shang-Hsuan; Chen, Hsu-Shun; Feng, Hsin-Chang; Li, Chih-Feng; Yang, Chou-Ying; Chang, Wei-Keng; Yang, Chang-Feng; Wu, Chun-Yu; Lin, Yen-Cheng; Yang, Tsung-Tse; Chang, Chih-Yang; Chu, Wen-Ting; Chuang, Harry; Wang, Yih; Chih, Yu-Der; Chang, Tsung-Yung Jonathan

doi:10.1109/isscc49657.2024.10454367

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Other1

Article1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Fang,

Naviner,

Wang

et al. 2024

2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI)

View full text Add to dashboard Cite

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Fang,

Naviner,

Wang

et al. 2024

2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI)

View full text Add to dashboard Cite

Progress of emerging non-volatile memory technologies in industry

Hellenbrand,

Teck,

MacManus-Driscoll

2024

MRS Communications

View full text Add to dashboard Cite

This prospective and performance summary provides a view on the state of the art of emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim is to inform academic researchers of the status of these technologies in industry, so as to help direct the right academic research questions for future materials and device development. eNVM already have a strong foothold in the semiconductor industry with the main target of replacing embedded flash memory, and soon possibly DRAM and SRAM, i.e. replacing conventional memory. Magnetic and resistive memory are the current frontrunners among eNVM for embedded flash replacement and they are very advanced in this, which poses high demands on future academic research for eNVM for this purpose. Phase-change and ferroelectric memory are less available as commercially available products. The use of eNVM for new forms of artificial intelligence hardware is a much more open field for future academic research. Graphical abstract

show abstract

15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm² Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

Cited by 2 publications

References 5 publications

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Progress of emerging non-volatile memory technologies in industry

Contact Info

Product

Resources

About

15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm2 Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C

Cited by 2 publications

References 5 publications

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

Progress of emerging non-volatile memory technologies in industry

Contact Info

Product

Resources

About

15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm² Bit-Cell, a 3.2GB/S Read Throughput, a 10KCycle Write Endurance and a 10-Year Retention at 105°C