15% enhancement of the photocurrent at the maximum power point of a thin film solar cell

Abstract

A modulation doped region placed away from the charge generation region reduces recombination loss by enhancing the charge extraction.

Magnetic Field Effects of Charge Transfer Excitons in Organic Semiconductor Devices

“…The Coulomb interaction between an electron and a hole in CTE exceeds dramatically thermal energy at room temperature due to the small intermolecular distance (∼1 nm) and relatively small dielectric constant ( ). In this review we do not enter into the discussion about CTE dissociation mechanisms and how the dissociation may be enhanced [35–39] . Importantly CTEs do dissociate to free polarons and contribute to the photocurrent (PC) generated by the OS solar cell.…”

“…In this review we do not enter into the discussion about CTE dissociation mechanisms and how the dissociation may be enhanced. [35][36][37][38][39] Importantly CTEs do dissociate to free polarons and contribute to the photocurrent (PC) generated by the OS solar cell. Here we focus on the effect of CTE dissociation on the magnetic field response of PC.…”

Y‐Type Non‐Fullerene Acceptors with Outer Branched Side Chains and Inner Cyclohexane Side Chains for 19.36% Efficiency Polymer Solar Cells

“…Cyclohexane is an unconjugated bulky alkyl ring, which has been used to provide large steric hindrance for the organic light-emitting diode molecule TAPC [32][33][34] as well as stable hexacene derivatives [35] and perylene diimide (PDI) based NF-SMAs [36,37] for preventing aggregation. It has also been extensively explored as a steric hindrance side group for donor polymers, where enlarged bandgaps and/or raised LUMO energy level were observed.…”

Reducing the Excitonic Loss at Donor/Acceptor Heterojunction with Negligible Exciton Dissociation Driving Force

“…At present, the heterojunction doping effect is limited by the few available doping sites on the polymer donor surface. It is natural to speculate that loading dopants either at and beneath the surface will magnify the doping benefits and solve the critical challenge in the ultralow Δ G S1,CT material system …”

“…It is natural to speculate that loading dopants either at and beneath the surface will magnify the doping benefits and solve the critical challenge in the ultralow ΔG S1,CT material system. 22 In this work, we apply molecular doping in NFA material systems with negligible ΔG S1,CT and reveal the physical mechanisms for its simultaneous enhancements of J sc and V oc . To enlarge the doping sites at D/A heterojunction, we replace the ethanol (ETH) with dichloromethane (DCM) after screening the library of common solvents by Flory− Huggins theory.…”