151  kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

Abstract

Room-temperature I–V characteristics of epitaxially grown Si/SiGe resonant interband tunneling diodes (RITDs) with extremely high peak current densities are presented. By optimizing the physical design, doping concentrations, and post-growth anneal temperatures, RITDs having peak current densities over 150 kA/cm2, peak-to-valley current ratios (PVCRs) greater than 2, and an estimated speed index of 34 mV/ps have been obtained. The interplay among the conditions to achieve maximum current density and highest PVCR is discussed. This result demonstrates the high potential of this type of Si-based tunnel diode for high-power mixed-signal applications.

Demonstration of forward inter-band tunneling in GaN by polarization engineering

“…Extensive research has led to efficient tunnel junctions in material systems such as the III-As 2 and even indirect band gap material system such as the SiGe 3 . In the III-nitride system, efficient inter-band tunneling is inhibited by wider depletion regions due to the larger band gap and dopant solubility limitations in degenerately doped GaN p-n junctions.…”

Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

“…1͑a͒, following previous reported RITD structures. 8,10 The intrinsic RITD structures in- clude two ␦-doping layers of opposite doping type with a composite tunneling barrier in between. The ␦-doping layers essentially define the quantum wells for resonant interband tunneling.…”

“…A voltagecontrolled oscillator 4 requires high current for the generation of strong microwave signals. Past Si/ SiGe resonant interband tunnel diode ͑RITD͒ work has explored this broad current range by varying the tunneling spacer thickness [6][7][8][9][10][11][12] and the Ge percentage. 8 Increased Ge percentage in the RITD spacer manifests as an elevated current density commonly attributed to the lowering of the barrier from the reduced bandgap.…”

“…27 The design of the tunneling structures for this experiment is based on the authors' past work developing Si/ SiGe-based tunnel diodes for circuit applications. [6][7][8][9][10][11][12] The peak-to-valley current ratio ͑PVCR͒ and peak current density ͑PCD͒ are two major figures of merit characterizing a tunnel diode's electrical performance. Both are determined by the tunneling process in the diode structure along with secondary effects.…”

Investigation Into the Integration of a Resonant Tunnelling Diode and an Optical Communications Laser: Model and Experiment

“…These parameters give the diode model a "high" ( 20 ) differential resistance at lower biases (0 to around 5 V) and "low" (1 as the -tends to ) resistance at higher biases and hence in series with the RTD -gives a wide hysteresis loop while presenting a low measured series resistance. Another factor contributing to the hysteresis loop width is the large value of RTD peak current which in combination with the series resistance, increases the value of [26]. To explain the origin of the non-linear loadline behavior we undertook an investigation of the contacts; a particular aim was to understand and reduce the width of the hysteresis curve.…”