154  μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K

Abstract

The demand for single photon emitters at λ=1.54 μm, which follows from the consistent development of quantum networks based on optical fiber technologies, makes Er:O centers in Si a viable resource, thanks to the I4→I4 optical transition of Er. While its implementation in high-power applications is hindered by the extremely low emission rate, the study of such systems in the low concentration regime remains relevant for quantum technologies. In this Letter, we explore the room-temperature photoluminescence at the telecomm wavelength from very low implantation doses of Er:O in Si. The lower-bound number of optically active Er atoms detected is of the order of 10, corresponding to a higher-bound value for the emission rate per individual ion of about 10 s.

GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

“…Our work has been triggered by the availability of single-atom implantation techniques as developed by two of us. Such techniques have already been used to deal with ions such as P 27 , As 28 , Bi 29 , C 30 , Ge 31 , and Er 32 , by implanting them one-by-one in a controlled way 33 . Because of the wide availability of Ge in microelectronics processes and its role in controlling the position of deep-level defects 31 , Ge represents a promising candidate for the extension of single-atom technology to high temperature, with the advantage of a relatively straightforward integration with the standard fabrication technologies of conventional microelectronics.…”

Room Temperature Resonant Photocurrent in an Erbium Low-Doped Silicon Transistor at Telecom Wavelength

“…After removing the sacrificial layer, the wafer was thermally annealed at 900 °C for 30 min to promote the association of erbium and oxygen. Because of the out-diffusion of Er from the surface consequent to the annealing process, which reduces the Er of a factor of ≈7 [6,22], we estimate that the Er atoms in the channel of the transistor are of the order of 4×104. According to the literature, the annealing of Si:ErO x at 900 °C determines the formation of a defect which lies at EC≈−150 meV where EC is the conduction band edge, and it is partially ionized by thermal excitations at 300 K [8].…”

“…Er implanted in silicon has received a renewed interest after the advent of single-photon-based quantum communications, because of its capability to transmit [1,2] and receive [3] photons at a wavelength compatible with commercial optical fibers, and because of its compatibility with silicon photonics [4,5,6]. Er-doped silicon junctions [7,8] and transistors [3,9] have been explored in the past.…”

“…There, the 4 I13/2→ 4 I15/2 transition of the Er3+ ion in the silicon transistor is stimulated by a laser tuned at the resonance wavelength. We already explored single atom and impurity band effects in single ion implanted transistors [10,11,12,13] by including As [14], P [15] and Ge [16] atoms in view of nanoelectronic application, and the individual photon emission regime by photoluminescence of ErO x dots in silicon [6]. Several near-infrared detectors have been demonstrated in the past starting from Reference [17], including some based on CMOS technology with high sensitivity [18,19], but they are not frequency-selective, which would be relevant to reduce dark counts without the use of filters when detection of single monochromatic photons is targeted in an integrated device.…”

Secure Quantum Communication Technologies and Systems: From Labs to Markets

“…Regarding weak coherent sources of photons at 1550 nm, III-V lasers, used for single-photon sources or to pump Si microrings for the generation of entangled photons on chips, may be replaced in the future with full group IV photon sources, such as germanium microcavities [72] or Er in silicon or silicon oxide chipsets [73,74], including coupling with resonant rings or cavities.…”