155  μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

Zhu, Si; Shi, Bei; Wan, Yating; Hu, Evelyn L.; Lau, Kei May

doi:10.1364/ol.42.000679

Cited by 24 publications

(13 citation statements)

References 28 publications

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“…4(d), which is among the best reported T 0 for QD MDLs on III-V substrates. 19,25,27 The temperature-insensitive characteristics demonstrated here can potentially promote their applications in silicon photonics. Here, the larger T 0 of the TE 1,6 mode can be attributed to a better overlap with the gain spectrum at higher temperatures and a superior carrier capture efficiency in larger QDs, 27 which prevent carrier evaporation into barriers.…”

Section: -3mentioning

confidence: 88%

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1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

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Section: -3mentioning

confidence: 88%

“…25 Dry-etch was performed to define the disk region and was terminated at the InP buffer layer, followed by a selective wet-etch to form the InP pillar. A typical 70 tilted scanning electron microscope (SEM) image in the inset of Fig.…”

mentioning

confidence: 99%

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Shi

Zhu

et al. 2017

Applied Physics Letters

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“…As shown in Fig. 7(c), the T 0 is fitted to be 277 K in the temperature range of 150 K to 330 K, which outperforms any other reported III-V based microdisk lasers [26,[33][34][35]. This is a result of strong carrier confinement by the QDs and the improved material quality by optimizing the QDs on Si substrates.…”

Section: Temperature Properties Of Microdisk Laser On Simentioning

confidence: 70%

“…For the samples grown on InP, the FWHMs are 63 meV for the 7-layer QDs and 50 meV for the 7-layer QWs, respectively. The relatively larger linewidth of the QD ensembles is due to the inhomogeneous broadening, which is associated with QDs non-uniformity [26]. The QWs on Si shows essentially the same FWHM (56 meV) as that on InP, while the FWHM of QDs on Si is enlarged to ~85 meV.…”

Section: Qd Vs Qw Microdisk Lasers On Siliconmentioning

confidence: 97%

Parametric study of high-performance 155 μm InAs quantum dot microdisk lasers on Si

Zhu¹,

Shi²,

Li³

et al. 2017

Opt. Express

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In this paper, we present a parametric study of high performance microdisk lasers at 1.55 μm telecom wavelength, monolithically grown on on-axis (001) Si substrates incorporating quantum dots (QDs) as gain elements. In the optimized structure, seven layers of QDs were adopted to provide a high gain as well as a suppressed inhomogeneous broadening. The same laser structure employing quantum wells (QWs) on Si was concurrently evaluated, showing a higher threshold and more dispersive quantum efficiency than the QDs. Finally, a statistical comparison of these Si-based QD microdisk lasers with those grown on InP native substrates was conducted, revealing somewhat higher thresholds but of the same order. The monolithically grown QD microlasers on Si also demonstrated excellent temperature stability, with a record high characteristic temperature of 277 K. This work thus offers helpful insight towards the optimization of reliable Si-based QD lasers at 1550 nm.

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“…6(e). Moreover, the subwavelength MDLs can successfully operate above 60℃ with a characteristic temperature T0 as high as 123 K, which is among the best reported T0 values for QD MDLs on III-V substrates [35], [36].…”

Section: B 155 μM Optically Pumped Qd Microdisk Lasers On Simentioning

confidence: 72%

1.55-μm Lasers Epitaxially Grown on Silicon

Shi

Han

et al. 2019

IEEE J. Select. Topics Quantum Electron.

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We have developed InP based 1.55 µm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was established, leading to device quality III-V nanostructures and thin films. Combining metal organic chemical vapor deposition (MOCVD) grown 1.55 µm InAs QDs and the InP/Si thin film templates, we have achieved electrically driven 1.55 µm QD lasers on Si operating at room-temperature. To reduce device footprint and energy consumption, a buffer-less integration path by growing InP nano-ridge lasers on prepatterned silicon-on-insulators (SOI) wafers has been explored. Material and device characterizations and an outlook for device component integration is discussed.

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155 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

Cited by 24 publications

References 28 publications

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

Parametric study of high-performance 155 μm InAs quantum dot microdisk lasers on Si

1.55-μm Lasers Epitaxially Grown on Silicon

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