16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

Yu, Qisheng; Huang, Jiaweiwen; Shen, Zhigang; Zhang, Aohang; Chen, Wensuo

doi:10.1109/led.2024.3386769

IEEE Electron Device Lett.

2024

DOI: 10.1109/led.2024.3386769

|View full text |Cite

16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

Qisheng Yu,

Jiaweiwen Huang,

Zhigang Shen

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Modeling Thermal Impedance of IGBT Devices Based on Fractional Calculus Techniques

Yang,

Huang

et al. 2024

Electronics

View full text Add to dashboard Cite

The thermal impedance characteristics of insulated gate bipolar transistor (IGBT) modules are critical for the thermal management and design of electronic devices. This paper proposes a fractional-order equivalent thermal impedance model, which is inspired by the correlation between multi-time-scale dissipation characteristics of heat conduction processes and fractional calculus. The fractional-order equivalent thermal impedance model is derived based on the connection between fractional-order calculus and the Foster thermal network model in mathematical operations, with only two parameters to be identified: heat capacity C and fractional order α. Moreover, this paper provides a parameter identification method for the proposed fractional-order equivalent thermal impedance model based on the multi-objective particle swarm optimization (MOPSO) algorithm. In order to validate the effectiveness and superiority of this work, experiments and comparative works are provided in this paper. The results indicate that the fractional-order equivalent thermal impedance model can accurately describe the frequency domain characteristic curves of the thermal impedance of the Foster thermal network model for IGBT modules, with the difference between the amplitude frequency characteristics not exceeding 1 dB and the difference between the phase frequency characteristics not exceeding 1° within the operating frequency range of (1 kHz, 1 MHz).

show abstract

Modeling Thermal Impedance of IGBT Devices Based on Fractional Calculus Techniques

Yang,

Huang

et al. 2024

Electronics

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

Cited by 1 publication

References 30 publications

Modeling Thermal Impedance of IGBT Devices Based on Fractional Calculus Techniques

Modeling Thermal Impedance of IGBT Devices Based on Fractional Calculus Techniques

Contact Info

Product

Resources

About